Semiconductor laser with metal pull-back DBR grating
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsYifan Jiang, Wolfgang Parz, Padman Parayanthal
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Abstract
Aspects of the present disclosure describe semiconductor DFB laser structures including both pumped and unpumped regions/sections wherein unpumped regions act as DBR reflector(s) while pumped regions act as DFB gratings. Semiconductor DFB laser devices according to aspects of the present disclosure include an active layer that extends the length of the device that is identical in both pumped and unpumped regions/sections.
Claims20
A semiconductor laser with metal pull-back/opening pull-back distributed Bragg reflector (DBR) grating comprising:
- a continuous quantum-well (QW) active layer;
- an upper cladding layer positioned over the QW active layer;
- a lower cladding layer positioned under the QW active layer;
- a diffraction grating formed in one of the cladding layers, said diffraction grating exhibiting a different grating pitch in different particular sections of the semiconductor laser;
- wherein the diffraction grating extends along an entire length L of the semiconductor laser;
- wherein at least one section of the semiconductor laser is configured to be electrically pumped and at least another section of the semiconductor laser is configured to be electrically unpumped;
- wherein the QW active layer extends along the entire length of the semiconductor laser and exhibits a substantially identical composition and substantially uniform thickness in both electrically pumped and electrically unpumped sections.
A distributed feedback (DFB) laser comprising:
- a continuous waveguide active layer of substantially uniform thickness extending along a longitudinal axis;
- a Bragg grating structure arranged with respect to the waveguide and configured to provide distributed feedback along one or more sectional lengths of the waveguide and configured to provide distributed Bragg reflector (DBR) reflectivity along a different sectional length of the waveguide, the Bragg grating structure formed in a cladding layer adjacent to the continuous waveguide active layer;
- wherein a material composition of the continuous waveguide active layer is identical in both distributed feedback sectional lengths and distributed Bragg reflector sectional length.
A semiconductor laser comprising:
- a plurality of pumped, distributed feedback (DFB) grating regions;
- an unpumped, distributed Bragg reflector (DBR) grating region;
- an active layer that is associated with both the pumped DFB regions and the unpumped DBR region;
- a diffraction grating formed in a cladding layer adjacent to the active layer, diffraction grating providing the DFB and DBR grating regions;
- wherein the active layer extends along an entire length of the semiconductor laser and exhibits an identical material composition and substantially uniform thickness for the entire lengths of the pumped DFB regions and the unpumped DBR region.
Dependencies are inferred from the claim text.