Ridge-shaped laser structure and surface etched grating semiconductor laser with periodic pumping

A surface etched grating semiconductor laser with a periodic pumping structure, comprising a ridge-shaped laser structure, the ridge-shaped laser structure comprising:

• a lower doped dielectric layer, a multiple quantum well active layer, a ridge-shaped doped dielectric layer, a grating structure formed on the ridge-shaped doped dielectric layer and a top electrode layer formed on a top surface of the grating structure, stacked in sequence;
• wherein the grating structure comprises a plurality of grating grooves periodically spaced along a waveguide direction of the laser and periodically spaced electrical contact regions between the grating grooves, and an insulating layer at least covering sidewalls of each grating groove is formed in each of the grating grooves;
• wherein ohmic electrical contact is formed between the top electrode layer and a top surface of each of the electrical contact regions, such that carriers injected through the top electrode layer flow downward through the electrical contact regions and the ridge-shaped doped dielectric layer in turn, and then enter the multiple quantum well active layer, the injected carriers in the multiple quantum well active layer exhibit certain carrier density distribution region due to an existence of the insulated grating grooves;
• and
• wherein a maximum width of an orthographic projection of a bottom surface of each of the grating grooves on an upper surface of the multiple quantum well active layer is less than or equal to a minimum distance between the bottom surface of the grating grooves and the upper surface of the multiple quantum well active layer, such that the carriers in the certain carrier density distribution region are uniformly distributed under different values of injection current.