Extended-cavity diode laser component and method for producing same

A diode laser device comprising an amplifier section and a Bragg section, the amplifier section and the Bragg section being arranged along a longitudinal direction between a front facet and a rear facet to form a resonator for an optical radiation;

• wherein the diode laser device has a layer structure formed along a vertical direction perpendicular to the longitudinal direction for waveguiding the optical radiation, wherein the diode laser device has a waveguide structure in a transverse direction perpendicular to the vertical direction and the longitudinal direction, wherein an active layer is formed in the amplifier section over the entire length of the amplifier section in the layer structure;
• wherein the diode laser device comprises in longitudinal direction a passive propagation section for propagation of the optical radiation, the propagation section being arranged between the front facet and the Bragg section, wherein the length of the propagation section is chosen such that the diode laser device has a free spectral range of at most 6 GHz;
• and
• a surface grating extends in the Bragg section over the entire length of the Bragg section, the surface grating being formed by a plurality of grooves spaced apart from each other in the longitudinal direction, the spectral bandwidth of the surface grating is less than or equal to the free spectral range of the diode laser device, and the surface grating has a coupling coefficient between 0.1 mm−1 and 0.9 mm−1.