Method for producing a semi-conductor laser arrangement, and semi-conductor laser arrangement
Assigneeams-OSRAM International GmbH
InventorsMarkus Reinhard Horn, Jörg Erich Sorg, Harald König
Life of this patent
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Abstract
The invention relates to a method for producing a semi-conductor laser arrangement (1), in which a first laser diode chip (21) is arranged on a first intermediate support (31). A second laser diode chip (22) is arranged on a second intermediate support (32). The second laser diode chip (22) with the second intermediate support (32) is arranged on the first intermediate support (31), the second intermediate support (32) being arranged on a side of the second laser diode chip (22) facing away from the first intermediate support (31). The invention furthermore relates to a semi-conductor arrangement (1).
Claims16
A method for producing a semiconductor laser arrangement having the following steps:
- a) arranging a first laser diode chip on a first intermediate heat dissipation carrier such that the first laser diode chip is arranged between a first laser diode chip substrate of the first laser diode chip and the first intermediate heat dissipation carrier;
- b) arranging a second laser diode chip on a second intermediate heat dissipation carrier such that a second laser diode chip substrate of the second laser diode chip is arranged between the second laser diode chip and the second intermediate heat dissipation carrier;
- and
- c) arranging the second laser diode chip having the second intermediate heat dissipation carrier on the first intermediate heat dissipation carrier, wherein the second intermediate heat dissipation carrier is arranged on a side of the second laser diode chip facing away from the first intermediate heat dissipation carrier,
- wherein the first laser diode chip is fastened on the first intermediate heat dissipation carrier but not fastened on the second intermediate carrier and the second laser diode chip is fastened on the second intermediate heat dissipation carrier in each case by a connecting layer.
A semiconductor laser arrangement having a first laser diode chip and a second laser diode chip, wherein
- the first laser diode chip and the second laser diode chip are arranged on a first intermediate heat dissipation carrier such that the first laser diode chip is arranged between a first laser diode chip substrate of the first laser diode chip and the first intermediate heat dissipation carrier;
- the second laser diode chip is arranged on a second intermediate heat dissipation carrier, wherein a second laser diode chip substrate of the second laser diode chip is arranged between the second laser diode chip and the second intermediate heat dissipation carrier and the second intermediate heat dissipation carrier is arranged on a side of the second laser diode chip facing away from the first intermediate heat dissipation carrier;
- and
- the first laser diode chip is fastened on the first intermediate heat dissipation carrier but not fastened on the second intermediate carrier and the second laser diode chip is fastened on the second intermediate heat dissipation carrier in each case by a connecting layer.
Dependencies are inferred from the claim text.