# US 12,603,404 B2 · Battery module, method for manufacturing battery module, electronic device, and electric vehicle > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,603,404 B2 - Document ID: US12603404B2 - Status: Granted - Kind: B2 - Application number: 18/124,271 - Filed: 2023-03-21 - Published: 2023-07-13 - Granted: 2026-04-14 - Earliest claimed: 2020-12-15 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Motoki Katayama - Web page: https://patentgrep.com/patent/US12603404B2 ## CPC - H01M 50/581: in response to temperature - H01M 10/0562: Solid materials - H01M 10/425: {Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing (printed circuits H05K1/00)} - H01M 10/486: {for measuring temperature} - H01M 10/637: characterised by the use of reversible temperature-sensitive devices, e.g. NTC, PTC or bimetal devices; characterised by control of the internal current flowing through the cells, e.g. by switching (means for preventing undesired use or discharge H01M50/572) - H01M 50/202: Casings or frames around the primary casing of a single cell or a single battery - H01M 50/519: comprising printed circuit boards [PCB] - H01M 50/574: Devices or arrangements for the interruption of current - H02J 7/00: Circuit arrangements for charging or discharging batteries or for supplying loads from batteries - H01M 2200/106: PTC - H01M 2220/20: Batteries in motive systems, e.g. vehicle, ship, plane - Y02E 60/10: Energy storage using batteries - H01M: PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY - H02J: ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A battery module includes: an all-solid-state battery having a voltage exceeding 0 V; a semiconductor element; a PTC element; and a circuit board, wherein the all-solid-state battery, the semiconductor element, and the PTC element are solder-bonded to the circuit board, the all-solid-state battery has a positive electrode terminal and a negative electrode terminal, the semiconductor element is electrically connected between the positive electrode terminal and the negative electrode terminal, and the PTC element is connected in series between the positive electrode terminal or the negative electrode terminal and the semiconductor element. ## Claims ### Claim 1 A battery module comprising: an all-solid-state battery having a voltage exceeding 0 V; a semiconductor element; a PTC element; and a circuit board, wherein the all-solid-state battery, the semiconductor element, and the PTC element are solder-bonded to the circuit board, the all-solid-state battery has a positive electrode terminal and a negative electrode terminal, the semiconductor element is electrically connected between the positive electrode terminal and the negative electrode terminal, and the PTC element is connected in series between the positive electrode terminal or the negative electrode terminal and the semiconductor element, wherein the PTC element is configured to trip before the semiconductor element reaches a junction temperature, wherein a trip temperature of the PTC element is a temperature set within a range of 50° C. below the junction temperature of the semiconductor element, and wherein the trip temperature of the PTC element is 90° C. or more and 140° C. or less. ### Claim 2 (depends on 1) The battery module according to claim 1, wherein the semiconductor element includes a control unit and a switch unit, and the control unit monitors a state of the all-solid-state battery and transmits a control signal to the switch unit in accordance with the state. ### Claim 3 (depends on 1) The battery module according to claim 1, wherein a trip temperature of the PTC element is higher than an operating temperature of the semiconductor element and lower than the junction temperature of the semiconductor element. ### Claim 4 (depends on 1) The battery module according to claim 1, wherein the circuit board has a plurality of mounting surfaces on which an electronic component is mounted, the PTC element and the semiconductor element are solder-bonded to a same mounting surface, and the all-solid-state battery is solder-bonded to another mounting surface. ### Claim 5 A method for manufacturing a battery module in which an all-solid-state battery having a positive electrode terminal and a negative electrode terminal, a semiconductor element, and a PTC element are solder-bonded to a circuit board, the method comprising: electrically connecting the semiconductor element between the positive electrode terminal and the negative electrode terminal by the solder-bonding, connecting the PTC element in series between the positive electrode terminal or the negative electrode terminal and the semiconductor element by the solder-bonding, and tripping the PTC element before an atmospheric temperature during the solder-bonding reaches a junction temperature of the semiconductor element, wherein the PTC element is configured to trip before the semiconductor element reaches a junction temperature, wherein a trip temperature of the PTC element is a temperature set within a range of 50° C. below the junction temperature of the semiconductor element, and wherein the trip temperature of the PTC element is 90° C. or more and 140° C. or less. ### Claim 6 (depends on 1) An electronic device comprising the battery module according to claim 1. ### Claim 7 (depends on 1) An electric vehicle comprising the battery module according to claim 1. ### Claim 8 (depends on 1) The battery module according to claim 1, wherein the all-solid-state battery, the semiconductor element, and the PTC element are solder-bonded to the circuit board with a solder that has a melting point higher than the junction temperature of the semiconductor element.