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US 12,603,265 B2Granted
Method for improving deposition process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Tang Wu, Szu-Hua Wu, Chin-Szu Lee, Yi-Lin Wang
Life of this patent
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Abstract
A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.
Claims20
A method comprising:
- placing a wafer on a wafer holder;
- depositing a film on a front surface of the wafer;
- and
- blowing a backside gas onto a back surface of the wafer, blowing the backside gas being performed simultaneously as depositing the film, an area below the wafer being divided into a first portion and a second portion, the first portion and the second portion being separated by a redistributor plate, the redistributor plate comprising a plurality of openings, the backside gas flowing from a backside gas inlet to the first portion, through the plurality of openings in the redistributor plate, and into the second portion, wherein the back surface of the wafer is exposed to the second portion, wherein the backside gas is selected from a group consisting of nitrogen, helium, neon, and combinations thereof, wherein the backside gas is an only gas blowing the backside gas through the plurality of openings to the second portion.
1 more element
A method comprising:
- depositing a first metal-containing layer on a front side of a wafer, wherein depositing the first metal-containing layer comprises simultaneously:
- generating a first plasma over the front side of the wafer;
- and
- blowing a first backside gas along a back surface of the wafer, the first backside gas comprising Ar, N2, Ne, He, or combinations thereof;
- and
- depositing a second metal-containing layer on the first metal-containing layer, wherein depositing the second metal-containing layer comprises simultaneously:
- generating a second plasma over the front side of the wafer;
- and
- blowing a second backside gas along the back surface of the wafer, wherein the second backside gas is free of argon and H2.
6 more elements
A method comprising:
- forming a first conductive layer over a substrate;
- and
- forming a TiN layer over the first conductive layer, wherein forming the TiN layer comprises performing a plasma process while simultaneously blowing a first backside gas through openings in a redistributor plate and into a cavity, the cavity exposing a back surface of the substrate, wherein the first backside gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof, wherein the first backside gas is heated.
Dependencies are inferred from the claim text.