# US 12,603,264 B2 · Semiconductor processing tool and methods of operation

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- Number: US 12,603,264 B2
- Document ID: US12603264B2
- Status: Granted
- Kind: B2
- Application number: 18/748,650
- Filed: 2024-06-20
- Published: 2024-10-17
- Granted: 2026-04-14
- Earliest claimed: 2022-09-15
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Yen-Liang Lin; Yu-Kang Huang; Yu-Chuan Tai
- Web page: https://patentgrep.com/patent/US12603264B2

## CPC

- H01J 37/345: {Magnet arrangements in particular for cathodic sputtering apparatus (material of magnets or magnets in general H01F1/00, H01F7/00)}
- C23C 14/185: {by cathodic sputtering}
- C23C 14/345: {using substrate bias}
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- C23C 14/54: Controlling or regulating the coating process
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/3426: {Material}
- H01J 37/3464: {Operating strategies}
- H01J 37/3476: {Testing and control}
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 2237/24564: Measurements of electric or magnetic variables, e.g. voltage, current, frequency
- H01J 2237/332: Coating
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Some implementations described herein provide a physical vapor deposition tool. The physical vapor deposition tool includes a magnet component, a single cathode, and a power circuit for biasing a pedestal that supports a semiconductor substrate. During a deposition operation that deposits an inert metal material, the physical vapor deposition tool may modulate an electromagnetic field emanating from the magnet component that includes spiral-shaped bands having different ranges of magnetic strength. The physical vapor deposition tool may have an increased throughput relative to a physical vapor deposition tool without the magnet component, the single cathode, and the power circuit. Additionally, or alternatively, the inert metal material may have a grain size that is greater relative to a grain size of an inert metal material deposited using the physical vapor deposition tool without the magnet component, the single cathode, and the power circuit.

## Claims

### Claim 1

A deposition tool, comprising:
a target structure including inert metal material;
a pedestal component, supporting a substrate, below the target structure; and
a controller configured to generate an electromagnetic field between the substrate and the target structure to facilitate a flow of the inert metal material onto the substrate, wherein the electromagnetic field includes spiral-shaped bands having different ranges of magnetic strength, wherein at least one of the spiral-shaped bands is entirely within another one of the spiral-shaped bands.

### Claim 2 (depends on 1)

The deposition tool of claim 1,
wherein the controller is further configured to modulate the electromagnetic field between the substrate and the target structure.

### Claim 3 (depends on 2)

The deposition tool of claim 2, wherein, to modulate the electromagnetic field, the controller is configured to:
apply a first electrical bias to the target structure, or
apply a second electrical bias to the pedestal component.

### Claim 4 (depends on 3)

The deposition tool of claim 3,
wherein the first electrical bias is applied to the target structure to cause ions in a plasma to accelerate toward the target structure.

### Claim 5 (depends on 3)

The deposition tool of claim 3,
wherein the second electrical bias is applied to the pedestal component to generate the electromagnetic field between the target structure and the substrate.

### Claim 6 (depends on 3)

The deposition tool of claim 3,
wherein the second electrical bias is applied to the pedestal component to cause a modulation of the electromagnetic field between the substrate and the target structure.

### Claim 7

A device, comprising:
a processing chamber, including:
a target structure including inert metal material; and
a pedestal component, supporting a substrate, below the target structure; and
one or more power circuits, connected to the pedestal component,
wherein the one or more power circuits are configured to generate an electromagnetic field between the substrate and the target structure to facilitate a flow of the inert metal material during a deposition process,
wherein the electromagnetic field includes spiral-shaped bands having different ranges of magnetic strength.

### Claim 8 (depends on 7)

The device of claim 7, further comprising:
a gas supply system configured to supply one or more gases to the processing chamber to form a plasma between the target structure and the substrate.

### Claim 9 (depends on 8)

The device of claim 8,
wherein an electrical bias, formed from the one or more power circuits, causes ions in the plasma to accelerate toward the target structure to sputter etch the target structure.

### Claim 10 (depends on 8)

The device of claim 8,
wherein one or more gases comprises krypton or argon.

### Claim 11 (depends on 7)

The device of claim 7, further comprising:
a vacuum pump configured to create a vacuum state in the processing chamber during the deposition process.

### Claim 12 (depends on 7)

The device of claim 7, further comprising:
a shutter disc configured to protect the pedestal component from particulates or contaminants during the deposition process.

### Claim 13 (depends on 12)

The device of claim 12, further comprising:
a shield configured to shield the substrate and the shutter disc during the deposition process; and
a platen ring configured to assist in maintaining a position of the substrate and shutter disc during the deposition process.

### Claim 14

A deposition tool, comprising:
a target structure configured to deposit an inert metal material; and
a direct current power circuit configured to modulate an electromagnetic field, between a semiconductor substrate and the target structure, comprising spiral-shaped bands having different ranges of magnetic strength that promote or facilitate a uniform flow of the inert metal material onto a substrate on a pedestal component, wherein at least one of the spiral-shaped bands is entirely within another one of the spiral-shaped bands.

### Claim 15 (depends on 14)

The deposition tool of claim 14,
wherein each spiral-shaped band of the spiral-shaped bands includes at least one of:
a different distribution of a magnetic structure, or
a different mean or magnitude of the magnetic strength.

### Claim 16 (depends on 14)

The deposition tool of claim 14, wherein, to modulate the electromagnetic field, the direct current power circuit is configured to:
change at least one of a range of magnetic forces, or a distribution of magnetic forces, within one or more spiral-shaped bands of the spiral-shaped bands.

### Claim 17 (depends on 14)

The deposition tool of claim 14, wherein, to modulate the electromagnetic field, the direct current power circuit is configured to modulate one or more of an electromagnetic field or an electromagnetic wave within at least one spiral-shaped band of the spiral-shaped bands.

### Claim 18 (depends on 14)

The deposition tool of claim 14, further comprising:
a gas supply system configured to initiate a flow of gas towards the electromagnetic field.

### Claim 19 (depends on 18)

The deposition tool of claim 18,
wherein the gas comprises krypton.

### Claim 20 (depends on 14)

The deposition tool of claim 14,
wherein the direct current power circuit is further configured to control, based on modulating the electromagnetic field, a uniformity of a layer of the inert metal material on the substrate to satisfy at least one of a thickness threshold, a resistivity threshold, or a grain size threshold.