# US 12,603,263 B2 · Apparatuses and techniques for cleaning a multi-station semiconductor processing chamber

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- Number: US 12,603,263 B2
- Document ID: US12603263B2
- Status: Granted
- Kind: B2
- Application number: 18/712,902
- Filed: 2022-11-21
- Published: 2025-01-16
- Granted: 2026-04-14
- Earliest claimed: 2021-11-23
- Assignees: Lam Research Corporation
- Applicants: Lam Research Corporation
- Inventors: Xin Meng; Xinyi Chen; Sreeram Sonti; Kevin Bertsch; Defu Liang; Zhuozhi Chen; Rohit Ode; William Schlosser; Tongtong Guo; Rachel E. Batzer
- Web page: https://patentgrep.com/patent/US12603263B2

## CPC

- H01J 37/32862: {In situ cleaning of vessels and/or internal parts}
- H10P 72/7621: {characterised by supporting two or more semiconductor substrates}
- C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases}
- C23C 16/45563: {Gas nozzles}
- C23C 16/45589: {Movable means, e.g. fans}
- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/3244: {Gas supply means}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/32853: {Hygiene}
- H01J 37/32899: {Multiple chambers, e.g. cluster tools}
- H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers}
- H10P 72/7626: {characterised by the construction of the shaft}
- H01J 2237/335: Cleaning
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Systems and methods for redirecting cleaning chemistry flows within a multi-station semiconductor processing chamber are disclosed. In such systems, a cleaning chemistry flow, e.g., a plasma from a remote plasma generator, may be directed onto a hub of an indexer that is centrally mounted within the chamber. The hub may have features that cause the cleaning chemistry flows to be redirected in a radially outward direction. By rotating the hub and/or changing the relative elevational positions between the hub and a cleaning chemistry inlet that provides the cleaning chemistry, the cleaning chemistry may be redirected into different regions of the chamber, thereby allowing for a more thorough and complete cleaning process.

## Claims

### Claim 1

A method of cleaning a multi-station processing chamber comprising a plurality of processing stations within a chamber interior, a hub located in a center area of the chamber interior, configured to rotate about a center axis, and having a plurality of channels in a top surface of the hub, and a cleaning chemistry inlet configured to direct a cleaning chemistry from a remote source into the chamber interior and onto the top surface of the hub, the method comprising:
flowing, while the hub is at a first angular position with respect to the center axis, the cleaning chemistry from the remote source through the cleaning chemistry inlet and onto the top surface of the hub, and thereby causing the cleaning chemistry to flow through at least some channels in the plurality of channels and into a plurality of first regions within the chamber interior, wherein each channel of the at least some channels directs the cleaning chemistry flow into one corresponding first region;
rotating, after the flowing of the cleaning chemistry onto the hub while the hub is at the first angular position, the hub by a first angle to a second angular position with respect to the center axis; and
flowing, while the hub is at the second angular position, the cleaning chemistry through the cleaning chemistry inlet and onto the top surface of the hub, and thereby causing the cleaning chemistry to flow through at least some channels in the plurality of channels and into a plurality of second regions within the chamber interior, wherein each channel of the at least some channels directs the cleaning chemistry flow into one corresponding second region.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
positioning, before the flowing of the cleaning chemistry onto the top surface of the hub while the hub is at the first angular position, the hub at the first angular position with respect to the center axis.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
stopping, after the flowing of the cleaning chemistry onto the top surface of the hub while the hub is at the first angular position and before the rotating, the flowing of the cleaning chemistry onto the hub.

### Claim 4 (depends on 1)

The method of claim 1, wherein:
the method further comprises raising, after the flowing of the cleaning chemistry onto the top surface of the hub while the hub is at the first angular position and before the rotating, the hub along the center axis such that a first vertical offset between the hub and a top of the multi-station processing chamber decreases to a second vertical offset smaller than the first vertical offset,
the rotating further includes rotating the hub while the hub is at the second vertical offset, and
the method further comprises lowering, after the rotating, the hub along the center axis from the second vertical offset to the first vertical offset.

### Claim 5 (depends on 4)

The method of claim 4, wherein:
each processing station includes a substrate support structure,
the method further comprises raising, after the flowing of the cleaning chemistry onto the top surface of the hub while the hub is at the first angular position and before the rotating, each substrate support structure such that a third vertical offset between each substrate support structure and the top of the multi-station processing chamber decreases to a fourth vertical offset smaller than the third vertical offset,
the rotating further includes rotating the hub while the hub is at the second vertical offset and while each substrate support is at the fourth vertical offset, and
the method further comprises lowering, after the rotating, each substrate support structure from the fourth vertical offset to the third vertical offset.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
rotating, after the flowing of the cleaning chemistry onto the top surface of the hub while the hub is at the second angular position, the hub by a second angle to a third angular position with respect to the center axis; and
flowing, while the hub is at the third angular position, the cleaning chemistry through the cleaning chemistry inlet and onto the top surface of the hub, and thereby causing the cleaning chemistry to flow through at least some channels of the plurality of channels and into a plurality of third regions within the chamber interior, wherein each channel directs the cleaning chemistry flow into one corresponding third region.

### Claim 7 (depends on 1)

The method of claim 1, wherein each first region includes a portion of a corresponding sidewall of the multi-station processing chamber.

### Claim 8 (depends on 1)

The method of claim 1, wherein the first angle is a non-zero angle greater than 0 degrees and less than 90 degrees.

### Claim 9 (depends on 1)

The method of claim 1, wherein the first angle is a non-zero angle greater than 0 degrees and less than or equal to about 45 degrees, or greater than about 60 degrees and less than about 90 degrees.

### Claim 10 (depends on 1)

The method of claim 1, further comprising:
actively cooling the hub, during both the flowing while the hub is at the first angular position and the flowing while the hub is at the second angular position, by flowing a heat transfer fluid into one or more internal cavities within the hub and causing the hub to be in thermal contact with a heat transfer section of the multi-station processing chamber.

### Claim 11 (depends on 1)

The method of claim 1, wherein:
the plurality of channels includes a first set of channels and a second set of channels,
the channels in the first set of channels are in a first circular array about the center axis,
the channels in the second set of channels are in a second circular array about the center axis,
the channels in the first set of channels each have a first cross-sectional profile in a corresponding plane that is coincident with, and parallel to, the center axis,
the channels in the second set of channels each have a second cross-sectional profile in a corresponding plane that is coincident with, and parallel to, the center axis,
the first cross-sectional profiles are different from the second cross-sectional profiles,
the cleaning chemistry inlet has a plurality of flow outlets that are configured to direct the cleaning chemistry along a plurality of flow paths that are each at least partially at an oblique angle to an axis parallel to the center axis,
the flow outlets of the cleaning chemistry inlet are, in the first angular position, aligned with the channels in the first set of channels, and
the flow outlets of the cleaning chemistry inlet are, in the second angular position, aligned with the channels in the second set of channels.

### Claim 12 (depends on 11)

The method of claim 11, wherein:
the hub is part of an indexer having a plurality of indexer arms,
each indexer arm extends outward from the hub,
the channels in the first set of channels are azimuthally aligned with the indexer arms, and
the channels in the second set of channels are azimuthally aligned with sectors in between the indexer arms.

### Claim 13 (depends on 11)

The method of claim 11, wherein the first cross-sectional profiles are configured to direct the cleaning chemistry flowed from the cleaning chemistry inlet in a direction that has a radially outward component relative to the center axis and a component that is parallel to the center axis and oriented towards the cleaning chemistry inlet.

### Claim 14 (depends on 11)

The method of claim 11, wherein the second cross-sectional profiles are configured to direct the cleaning chemistry flowed from the cleaning chemistry inlet in a direction that has a radially outward component relative to the center axis and, optionally, a component that is parallel to the center axis and oriented away from the cleaning chemistry inlet.

### Claim 15

A system for semiconductor processing, the system comprising:
a multi-station processing chamber that comprises:
a plurality of side walls and a top that at least partially define a chamber interior,
a plurality of processing stations within the chamber interior that each include a substrate support structure configured to support a substrate,
a hub having a plurality of channels in a top surface of the hub, the hub located in a center area of the chamber interior,
a hub positioning mechanism configured to rotate the hub about a center axis, and
a cleaning chemistry inlet configured to direct a flow of a cleaning chemistry into the chamber interior and onto the top surface of the hub;
a remote cleaning chemistry source fluidically connected to the cleaning chemistry inlet and configured to flow the cleaning chemistry to the cleaning chemistry inlet; and
a controller having at least one processor and at least one memory, wherein the at least one memory stores instructions which, when executed by the at least one processor, cause the at least one processor to:
cause, while the hub is at a first angular position with respect to the center axis, the cleaning chemistry to flow from the remote cleaning chemistry source through the cleaning chemistry inlet and onto the top surface of the hub, thereby causing the cleaning chemistry to flow through at least some channels of the plurality of channels and into a plurality of first regions within the chamber interior, wherein each channel of the at least some channels directs the cleaning chemistry flow into one corresponding first region;
cause, after the cleaning chemistry is flowed onto the hub while the hub is at the first angular position, the hub positioning mechanism to rotate the hub by a first angle to a second angular position with respect to the center axis; and
cause, while the hub is at the second angular position, the cleaning chemistry to flow through cleaning chemistry inlet and onto the top surface of the hub, thereby causing the cleaning chemistry to flow through at least some channels of the plurality of channels and into a plurality of second regions within the chamber interior, wherein each channel of the at least some channels directs the cleaning chemistry flow into one corresponding second region.

### Claim 16 (depends on 15)

The system of claim 15, wherein the one or more memories further store instructions which, when executed by the at least one processor, further cause the at least one processor to cause, before the cleaning chemistry is flowed onto the top surface of the hub while the hub is at the first angular position, the hub positioning mechanism to position the hub at the first angular position with respect to the center axis.

### Claim 17 (depends on 15)

The system of claim 15, wherein the one or more memories further store instructions which, when executed by the at least one processor, cause the at least one processor to cause, after the flowing of the cleaning chemistry onto the top surface of the hub while the hub is at the first angular position and before the rotating, the flow of the cleaning chemistry to stop flowing onto the hub.

### Claim 18 (depends on 15)

The system of claim 15, wherein:
the hub positioning mechanism is further configured to raise and lower the hub along the center axis, and
the one or more memories further store instructions which, when executed by the at least one processor, cause the at least one processor to cause, after the cleaning chemistry is flowed onto the top surface of the hub while the hub is at the first angular position and before the hub is rotated, the hub positioning mechanism to raise the hub along the center axis such that a first vertical offset between the hub and the top of the multi-station processing chamber decreases to a second vertical offset smaller than the first vertical offset and the hub to be rotated from the first angular position to the second angular position while the hub is at the second vertical offset, and
the one or more memories further store instructions which, when executed by the at least one processor, cause the at least one processor, cause, after the hub is rotated, the hub positioning mechanism to lower the hub along the center axis from the second vertical offset to the first vertical offset.

### Claim 19 (depends on 18)

The system of claim 18, wherein:
each substrate support structure is configured to be raised and lowered along a respective center axis that extends through each substrate support structure,
the one or more memories further store instructions configured to cause, after the cleaning chemistry is flowed onto the hub while the hub is at the first angular position and before the hub is rotated, each substrate support structure to move upwards along each respective center axis such that a third vertical offset between each substrate support structure and the top of the multi-station processing chamber decreases to a fourth vertical offset smaller than the third vertical offset,
the hub is rotated from the first angular position to the second angular position while the hub is at the second vertical offset and while each substrate support is at the fourth vertical offset, and
the one or more memories further store instructions which, when executed by the at least one processor, cause the at least one processor to cause, after the hub is rotated, each substrate support structure to move downwards from the fourth vertical offset to the third vertical offset.

### Claim 20 (depends on 15)

The system of claim 15, wherein the one or more memories further store instructions which, when executed by the at least one processor, cause the at least one processor to:
cause, after the cleaning chemistry is flowed onto the hub while the hub is at the second angular position, the hub positioning mechanism to rotate the hub by a second angle to a third angular position with respect to the center axis; and
cause, while the hub is at the third angular position, the cleaning chemistry to flow through the cleaning chemistry inlet and onto the hub, and thereby cause the cleaning chemistry to flow through the at least some channels of the plurality of channels and into a plurality of third regions within the chamber interior, wherein each channel of the at least some channels of the plurality of channels directs the cleaning chemistry flow into one corresponding third region.

### Claim 21 (depends on 15)

The system of claim 15, wherein the hub includes four channels.

### Claim 22 (depends on 15)

The system of claim 15, wherein the hub includes eight channels.

### Claim 23 (depends on 15)

The system of claim 15, wherein:
the plurality of channels includes a first set of channels and a second set of channels,
the channels in the first set of channels are in a first circular array about the center axis,
the channels in the second set of channels are in a second circular array about the center axis,
the channels in the first set of channels each have a first cross-sectional profile in a corresponding plane that is coincident with, and parallel to, the center axis,
the channels in the second set of channels each have a second cross-sectional profile in a corresponding plane that is coincident with, and parallel to, the center axis,
the first cross-sectional profiles are different from the second cross-sectional profiles,
the cleaning chemistry inlet has a plurality of flow outlets that are configured to direct the cleaning chemistry along a plurality of flow paths that are each at least partially at an oblique angle to an axis parallel to the center axis,
the flow outlets of the cleaning chemistry inlet are, in the first angular position, aligned with the channels in the first set of channels, and
the flow outlets of the cleaning chemistry inlet are, in the second angular position, aligned with the channels in the second set of channels.

### Claim 24 (depends on 23)

The system of claim 23, wherein:
the hub is part of an indexer having a plurality of indexer arms,
each indexer arm extends outward from the hub,
the channels in the first set of channels are azimuthally aligned with the indexer arms, and
the channels in the second set of channels are azimuthally aligned with sectors in between the indexer arms.

### Claim 25 (depends on 23)

The system of claim 23, wherein the first cross-sectional profiles are configured to direct the cleaning chemistry flowed from the cleaning chemistry inlet in a direction that has a radially outward component relative to the center axis and a component that is parallel to the center axis and oriented towards the cleaning chemistry inlet.

### Claim 26 (depends on 23)

The system of claim 23, wherein the second cross-sectional profiles are configured to direct the cleaning chemistry flowed from the cleaning chemistry inlet in a direction that has a radially outward component relative to the center axis and, optionally, a component that is parallel to the center axis and oriented away from the cleaning chemistry inlet.

### Claim 27

A multi-station semiconductor processing system comprising:
a chamber having a plurality of processing stations within a chamber interior of the chamber;
a structure located in the chamber interior and configured to be moveable along a vertical center axis;
a cleaning chemistry inlet configured to direct a cleaning chemistry from a remote source into the chamber interior and onto the structure; and
a controller having at least one processor and at least one memory, wherein:
the at least one memory stores instructions which, when executed by the at least one processor, cause the at least one processor to:
cause, while the structure is at a first elevational position with respect to the cleaning chemistry inlet, the cleaning chemistry to flow from the remote source through the cleaning chemistry inlet and onto the structure, thereby causing the cleaning chemistry to be directed along a first outward direction;
cause the structure to move from the first elevational position to a second elevational position; and
cause, while the structure is at the second elevational position with respect to the cleaning chemistry inlet, the cleaning chemistry to flow from the remote source through the cleaning chemistry inlet and onto the structure, thereby causing the cleaning chemistry to be directed along a second outward direction, wherein the first outward direction and the second outward direction are different.