# US 12,603,259 B2 · Resistivity-controlled dielectric materials for substrate supports with improved high temperature chucking

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- Number: US 12,603,259 B2
- Document ID: US12603259B2
- Status: Granted
- Kind: B2
- Application number: 18/334,038
- Filed: 2023-06-13
- Published: 2024-12-19
- Granted: 2026-04-14
- Earliest claimed: 2023-06-13
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Amir H. Tavakoli; Jian Li; Peter Reimer
- Web page: https://patentgrep.com/patent/US12603259B2

## CPC

- H01J 37/32724: {Temperature}
- H10P 72/0432: {mainly by conduction}
- H10P 72/72: using electrostatic chucks
- H10P 72/722: {Details of electrostatic chucks}
- H10P 72/7616: {characterised by a coating, a hardness or a material}
- H01J 2237/2001: Maintaining constant desired temperature
- H01J 2237/2007: Holding mechanisms
- H01J 2237/332: Coating
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Substrate support assembly and methods of making such substrate support assemblies are provided. Substrate support assemblies include an electrostatic chuck body defining a substrate support surface, a support stem coupled with the electrostatic chuck body, and an electrode embedded within the electrostatic chuck body. Substrate support surfaces exhibit a resistivity of 1×108 Ω-cm to 1×1011 Ω-cm at a temperature of greater than 650° C. Substrate support surfaces can include a composite ceramic material having a base dielectric material and a second dielectric material having an electrical resistivity at least about two times higher than an electrical resistivity of the base dielectric material at a temperature of greater than 650° C.

## Claims

### Claim 1

A substrate support assembly comprising:
an electrostatic chuck body defining a substrate support surface;
a support stem coupled with the electrostatic chuck body; and
an electrode embedded within the electrostatic chuck body, wherein the substrate support surface comprises a composite ceramic material, the composite ceramic material comprising a second dielectric material dispersed in a base dielectric material, and the substrate support surface comprises a resistivity of 1×108 Ω-cm to 1×1011 Ω-cm at a temperature of greater than 600° C.

### Claim 2 (depends on 1)

The substrate support assembly of claim 1, wherein the substrate support surface comprises a resistivity of 1×108 Ω-cm to 1×1011 Ω-cm at a temperature of greater than 650° C.

### Claim 3 (depends on 1)

The substrate support assembly of claim 1, further comprising a heater embedded in the chuck body.

### Claim 4

A substrate support assembly comprising:
an electrostatic chuck body defining a substrate support surface;
a support stem coupled with the electrostatic chuck body; and
an electrode embedded within the electrostatic chuck body;
wherein the substrate support surface comprises a composite ceramic material, the composite ceramic material comprising a base dielectric material dispersed in a second dielectric material, wherein the second dielectric material comprises an electrical resistivity at least about two times higher than an electrical resistivity of the base dielectric material at a temperature of greater than 600° C.

### Claim 5 (depends on 4)

The substrate support assembly of claim 4, wherein the composite ceramic material has a second dielectric material concentration at any given point along the substrate support or portion thereof that is greater than or about 50% of an average second dielectric material concentration.

### Claim 6 (depends on 4)

The substrate support assembly of claim 4, wherein the base dielectric material comprises aluminum nitride and/or the second dielectric material comprises boron nitride.

### Claim 7 (depends on 6)

The substrate support assembly of claim 6, wherein the boron nitride is polycrystalline boron nitride, pyrolytic boron nitride, amorphous boron nitride, stack of multiple sheets of boron nitride, or a combination thereof.

### Claim 8 (depends on 4)

The substrate support assembly of claim 4, wherein the second dielectric material is present in the composite ceramic material in an amount of about 0.1 wt. % to about 30 wt. %, based upon the weight of the base dielectric material and the second dielectric material.