Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

A substrate processing apparatus, comprising:

• a process container including a cylindrical portion, in which a process chamber is formed, a substrate being arranged in the process chamber;
• a gas supplier configured to supply a processing gas to the process chamber;
• an electrode installed in a spiral shape to surround the process container from outside of the cylindrical portion of the process container and supplied with high-frequency power to plasma-excite the processing gas;
• a shield configured to surround the electrode from outside in a radial direction of the cylindrical portion and to shield an electric field generated by the electrode;
• a first mover configured to move the electrode and the shield integrally, with respect to the process container in a first horizontal direction of the cylindrical portion;
• and
• a second mover configured to move the electrode and the shield integrally, with respect to the process container in a second horizontal direction of the cylindrical portion, which is orthogonal to the first horizontal direction.