Selective deposition using differential surface charging

A plasma system comprising:

• a processing chamber;
• a remote plasma chamber configured to contain plasma comprising electrons and positive ions;
• an extraction grid separating the processing chamber and the remote plasma chamber;
• a substrate support disposed in the processing chamber and configured to support a substrate comprising a patterned layer;
• at least one gas source coupled to the remote plasma chamber and configured to provide an electron source gas and an ion source gas to the remote plasma chamber through one or more valves;
• a source power supply configured to generate the plasma in the remote plasma chamber;
• a direct current (DC) bias power supply electrically coupled to the substrate support;
• and
• a controller operatively coupled to the one or more valves, the DC bias power supply, and the source power supply, the controller comprising a processor and a non-transitory computer-readable medium storing a program including instructions that, when executed by the processor, perform a method comprising:
• negatively charging upper surfaces of the patterned layer with the electrons by concurrently
• applying source power from the source power supply with a first power level to generate plasma comprising the electrons in the remote plasma chamber separated from the patterned layer,
• applying a positive DC bias from the DC bias power supply to the substrate support, and
• applying a ground potential to the extraction grid while applying the source power and the positive DC bias;
• and
• selectively depositing a material on the upper surfaces with positive ions by concurrently
• applying source power from the source power supply with a second power level greater than the first power level to generate plasma comprising the positive ions in the remote plasma chamber,
• applying a negative DC bias from the DC bias power supply to the substrate support, and
• applying the ground potential to the extraction grid while applying the source power and the negative DC bias.

A plasma system comprising:

• a processing chamber;
• a remote plasma chamber configured to contain plasma comprising electrons and positive ions;
• an extraction grid separating the processing chamber and the remote plasma chamber;
• a substrate support disposed in the processing chamber and configured to support a substrate comprising a patterned layer;
• at least one gas source coupled to the remote plasma chamber and configured to provide an electron source gas and an ion source gas to the remote plasma chamber through one or more valves;
• a source power supply configured to generate the plasma in the remote plasma chamber;
• a direct current (DC) bias power supply electrically coupled to the substrate support;
• and
• a controller operatively coupled to the one or more valves, the DC bias power supply, and the source power supply, the controller comprising a processor and a non-transitory computer-readable medium storing a program including instructions that, when executed by the processor, perform a method comprising:
• negatively charging upper surfaces of the patterned layer with the electrons by concurrently
• applying source power from the source power supply to generate plasma comprising the electrons in the remote plasma chamber separated from the patterned layer, and
• applying a positive DC bias from the DC bias power supply to the substrate support to attract the electrons that pass through the extraction grid to the upper surfaces;
• and
• selectively depositing a material on the upper surfaces with positive ions by concurrently
• applying source power from the source power supply to generate plasma comprising the positive ions in the remote plasma chamber, and
• applying a negative DC bias from the DC bias power supply to the substrate support.