# US 12,603,224 B2 · Multilayered capacitor with external electode including sintered metal layer and conductive resin layer

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- Number: US 12,603,224 B2
- Document ID: US12603224B2
- Status: Granted
- Kind: B2
- Application number: 18/400,532
- Filed: 2023-12-29
- Published: 2024-08-22
- Granted: 2026-04-14
- Earliest claimed: 2023-02-20
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Seung Ah Kim; Chaedong Lee; Gyuho Yeon; Byungjun Jeon
- Web page: https://patentgrep.com/patent/US12603224B2

## CPC

- H01G 4/2325: {characterised by the material of the terminals}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H01G 4/0085: {Fried electrodes}
- H01G 4/12: Ceramic dielectrics {(H01G4/085 takes precedence)}
- H01G 4/232: electrically connecting two or more layers of a stacked or rolled capacitor
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

A multilayered capacitor includes a capacitor body including a dielectric layer and an internal electrode, and an external electrode having a connection portion and a band portion, wherein the external electrode includes a sintered metal layer and a conductive resin layer, when an average thickness of the conductive resin layer in the connection portion is Lb and an average thickness of the sintered metal layer in the connection portion is La, Lb is smaller than La, and when an average thickness of the conductive resin layer in the band portion is Tb and an average thickness of the sintered metal layer in the band portion is Ta, Tb is greater than Ta.

## Claims

### Claim 1

A multilayered capacitor, comprising
a capacitor body including a dielectric layer and an internal electrode and having first and second surfaces facing each other in a stacking direction of the dielectric layer and the internal electrode, third and fourth surfaces facing each other in a longitudinal direction, and fifth and sixth surfaces facing each other in a width direction, and
an external electrode having a connection portion outside the third and fourth surfaces and a band portion extending from the connection portion onto the first and second surfaces,
wherein the external electrode includes a sintered metal layer outside the capacitor body, and a conductive resin layer disposed outside the sintered metal layer and including a resin and a conductive metal,
when an average thickness of the conductive resin layer in the connection portion is Lb and an average thickness of the sintered metal layer in the connection portion is La, Lb≤0.8×La,
when an average thickness of the conductive resin layer in the band portion is Tb and an average thickness of the sintered metal layer in the band portion is Ta, Tb is greater than Ta, and
the average thickness (Tb) of the conductive resin layer in the band portion is about 15 μm to about 30 μm.

### Claim 2 (depends on 1)

The multilayered capacitor of claim 1, wherein
the external electrode further includes a plating layer outside the conductive resin layer.

### Claim 3 (depends on 2)

The multilayered capacitor of claim 2, wherein
when an average thickness of the plating layer in the connection portion is Lc, Lb is greater than Lc.

### Claim 4 (depends on 2)

The multilayered capacitor of claim 2, wherein
an average thickness (Lc) of the plating layer in the connection portion is about 7 μm to about 20 μm.

### Claim 5 (depends on 2)

The multilayered capacitor of claim 2, wherein
when an average thickness of the plating layer in the band portion is Tc, Tb is greater than Tc.

### Claim 6 (depends on 2)

The multilayered capacitor of claim 2, wherein
an average thickness (Tc) of the plating layer in the band portion is about 7 μm to about 15 μm.

### Claim 7 (depends on 2)

The multilayered capacitor of claim 2, wherein
the plating layer includes nickel (Ni), copper (Cu), tin (Sn), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), tungsten (W), titanium (Ti), lead (Pb), an alloy thereof, or a mixture thereof.

### Claim 8 (depends on 2)

The multilayered capacitor of claim 2, wherein
in the band portion,
an average length of the plating layer in the longitudinal direction is greater than an average length of the conductive resin layer in the longitudinal direction.

### Claim 9 (depends on 1)

The multilayered capacitor of claim 1, wherein
the average thickness (La) of the sintered metal layer in the connection portion is about 40 μm to about 80 μm.

### Claim 10 (depends on 1)

The multilayered capacitor of claim 1, wherein
the average thickness (Lb) of the conductive resin layer in the connection portion is about 30 μm to about 60 μm.

### Claim 11 (depends on 1)

The multilayered capacitor of claim 1, wherein
the average thickness (Tb) of the conductive resin layer in the band portion is greater than the average thickness (Lb) of the conductive resin layer in the connection portion.

### Claim 12 (depends on 1)

The multilayered capacitor of claim 1, wherein
the average thickness (Ta) of the sintered metal layer in the band portion is about 10 μm to about 15 μm.

### Claim 13 (depends on 1)

The multilayered capacitor of claim 1, wherein
the sintered metal layer includes a conductive metal and glass.

### Claim 14 (depends on 1)

The multilayered capacitor of claim 1, wherein
in the conductive resin layer,
the resin includes an epoxy-based resin, and
the conductive metal includes copper (Cu), silver (Ag), nickel (Ni), or a mixture thereof.

### Claim 15 (depends on 1)

The multilayered capacitor of claim 1, wherein
in the band portion, an average length of the conductive resin layer in the longitudinal direction is greater than an average length of the sintered metal layer in the longitudinal direction.

### Claim 16 (depends on 1)

The multilayered capacitor of claim 1, wherein
the band portion is disposed to extend from the connection portion onto the fifth and sixth surfaces.
