Back to results
US 12,603,109 B1Granted
P-metal electrical contact of laser diode for heat-assisted magnetic recording, and related apparatuses, data storage devices, systems, and methods
AssigneeSeagate Technology LLC
InventorsAdam Andrzej Lapicki, Reyad Mehfuz
Life of this patent
Estimating the term…
Abstract
Laser diode having a p-metal electrical contact that includes a metal adhesion layer disposed on the p-type region of the semiconductor laser structure, and a metal bi-layer disposed on the metal adhesion layer. The metal bi-layer includes a first metal layer disposed on the metal, adhesion layer, and a second metal layer disposed on the first metal layer. A metal conductive layer is disposed on the second metal layer. Related apparatuses, data storage devices, computing systems, and methods.
Claims20
A laser diode comprising:
- a semiconductor laser structure having an active region configured to generate laser light;
- and
- a p-metal electrical contact disposed on a p-type region of the semiconductor laser structure, wherein the p-metal electrical contact is configured to receive an electrical current to produce optical emission, and wherein the p-metal electrical contact comprises:
- a metal adhesion layer disposed on the p-type region of the semiconductor laser structure;
- a metal bi-layer disposed on the metal adhesion layer, wherein the metal bi-layer comprises:
- a first metal layer disposed on the metal adhesion layer, and
- a second metal layer disposed on the first metal layer, wherein the second metal layer comprises a metal that is different from a metal in the first metal layer;
- and
- a metal conductive layer disposed on the second metal layer.
6 more elements
A method comprising:
- forming a multilayer metal structure on a top surface of a p-type region of a semiconductor laser structure, wherein the multilayer metal structure comprises:
- a metal adhesion layer disposed on the p-type region of the semiconductor laser structure;
- a metal bi-layer disposed on the metal adhesion layer, wherein the metal bi-layer comprises:
- a first metal layer disposed on the metal adhesion layer;
- and
- a second metal layer disposed on the first metal layer, wherein the second metal layer comprises a metal that is different from a metal in the first metal layer, and
- a metal conductive layer disposed on the second metal layer;
- and
- exposing the multilayer metal structure to thermal annealing conditions to form a p-metal electrical contact.
6 more elements
Dependencies are inferred from the claim text.