# US 12,602,288 B2 · Memory systems and operating methods thereof

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- Number: US 12,602,288 B2
- Document ID: US12602288B2
- Status: Granted
- Kind: B2
- Application number: 18/781,592
- Filed: 2024-07-23
- Published: 2024-11-14
- Granted: 2026-04-14
- Earliest claimed: 2022-11-21
- Assignees: Yangtze Memory Technologies Co., Ltd.
- Applicants: Yangtze Memory Technologies Co., Ltd.
- Inventors: Xianwu Luo; Jiangwei Shi; Youxin He
- Web page: https://patentgrep.com/patent/US12602288B2

## CPC

- G06F 11/108: {Parity data distribution in semiconductor storages, e.g. in SSD}
- G06F 11/1076: {Parity data used in redundant arrays of independent storages, e.g. in RAID systems}
- G06F 11/1096: {Parity calculation or recalculation after configuration or reconfiguration of the system}
- G06F 13/1673: {using buffers}
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)

## Abstract

In once example, a memory system includes a controller and a three-dimensional non-volatile memory that are coupled. The three-dimensional non-volatile memory includes a three-dimensional memory array. The three-dimensional memory array includes a plurality of word lines and a plurality of pages that are coupled. The controller is configured to: calculate received page data corresponding to a first word line in units of page data corresponding to one word line to obtain first RAID parity data, and store the first RAID parity data in a parity buffer space; and calculate received page data corresponding to an (i+1)th word line and ith RAID parity data to obtain (i+1)th RAID parity data, and store the (i+1)th RAID parity data in the parity buffer space, the (i+1)th RAID parity data overwriting the ith RAID parity data, i being a positive integer greater than or equal to 1.

## Claims

### Claim 1

A memory system, the memory system comprising:
a controller; and
a three-dimensional non-volatile memory device, wherein the three-dimensional non-volatile memory device includes a three-dimensional memory array, the three-dimensional memory array includes a plurality of word lines and a plurality of pages that are coupled, and wherein the controller coupled to the three-dimensional non-volatile memory device, and the controller is configured to:
receive first page data, wherein the received first page data corresponds to a first word line of the plurality of word lines in units of page data corresponding to one word line;
generate ith redundant array of independent disks (RAID) parity data based on the received first page data; and
generate (i+1)th RAID parity data based on received second page data calculated based on an (i+1)th word line and the ith RAID parity data, wherein i is a positive integer greater than or equal to 1.

### Claim 2 (depends on 1)

The memory system of claim 1, wherein the controller is further configured to store the ith RAID parity data and the (i+1)th RAID parity data in a parity buffer space of the controller.

### Claim 3 (depends on 2)

The memory system of claim 2, wherein the (i+1)th RAID parity data overwrites the ith RAID parity data.

### Claim 4 (depends on 2)

The memory system of claim 2, wherein the controller is further configured to:
determine that the parity buffer space is insufficient, the determination based on a memory space of the parity buffer space and the ith RAID parity data; and
in a case that the parity buffer space is insufficient, set a first memory space of a write buffer space for buffering the ith RAID parity data.

### Claim 5 (depends on 4)

The memory system of claim 4, wherein the controller is further configured to store the first page data corresponding to the first word line to the page data corresponding to the (i+1)th word line in a second memory space of the write buffer space.

### Claim 6 (depends on 5)

The memory system of claim 5, wherein a configuration priority of the second memory space of the write buffer space is higher than a configuration priority of the first memory space.

### Claim 7 (depends on 4)

The memory system of claim 4, wherein the parity buffer space includes a parity data buffer space and a garbage collection buffer space, wherein the parity data buffer space is configured to buffer the ith RAID parity data, the garbage collection buffer space is configured to buffer garbage collection data, and the garbage collection data includes RAID parity data corresponding to data that needs to be collected in page data.

### Claim 8 (depends on 1)

The memory system of claim 1, wherein the controller is further configured to, in response to a value of i being w−1, write wth RAID parity data into the three-dimensional non-volatile memory device, wherein w is a number of word lines corresponding to one fund.

### Claim 9 (depends on 2)

The memory system of claim 2, wherein the controller is further configured to:
determine the parity buffer space; and
perform a swap operation after powering up, the performance of the swap operation to empty the parity buffer space prior to calculation of received page data.

### Claim 10 (depends on 1)

The memory system of claim 1, wherein the ith RAID parity data is obtained by performing an XOR operation on the first page data corresponding to the first word line.

### Claim 11 (depends on 1)

The memory system of claim 1, wherein the (i+1)th RAID parity data is used for checking the first page data corresponding to the first word line to the (i+1)th word line.

### Claim 12

A method of operating a memory system, the method comprising:
receiving, by a controller of the memory system coupled to a three-dimensional non-volatile memory device of the memory system, first page data, the three-dimensional non-volatile memory device including a three-dimensional memory array, the three-dimensional memory array including a plurality of word lines and a plurality of pages that are coupled, wherein the received first page data corresponds to a first word line of the plurality of word lines in units of page data corresponding to one word line;
generating, by the controller, ith redundant array of independent disks (RAID) parity data based on the received first page data; and
generating, by the controller, (i+1)th RAID parity data based on received second page data calculated based on an (i+1)th word line and the ith RAID parity data, wherein i is a positive integer greater than or equal to 1.

### Claim 13 (depends on 12)

The method of claim 12, further including storing the ith RAID parity data and the (i+1)th RAID parity data in a parity buffer space of the controller.

### Claim 14 (depends on 13)

The method of claim 13, wherein the (i+1)th RAID parity data overwrites the ith RAID parity data.

### Claim 15 (depends on 13)

The method of claim 13, wherein, before the storing the ith RAID parity data in the parity buffer space, the method further includes:
determining, by the controller, that the parity buffer space is insufficient, the determination based on a memory space of the parity buffer space and the ith RAID parity data; and
in a case that the parity buffer space is insufficient, setting, by the controller, a first memory space of a write buffer space for buffering the ith RAID parity data.

### Claim 16 (depends on 15)

The method of claim 15, wherein the method further includes storing, by the controller, the first page data corresponding to the first word line to the page data corresponding to the (i+1)th word line in a second memory space of the write buffer space.

### Claim 17 (depends on 16)

The method of claim 16, wherein a configuration priority of the second memory space of the write buffer space is higher than a configuration priority of the first memory space.

### Claim 18 (depends on 12)

The method of claim 12, wherein the method further includes, in response to a value of i being w−1, writing, by the controller, wth RAID parity data into the three-dimensional non-volatile memory device, wherein w is a number of word lines corresponding to one fund.

### Claim 19 (depends on 12)

The method of claim 12, wherein the ith RAID parity data is obtained by performing an XOR operation on the first page data corresponding to the first word line.

### Claim 20

An electronic system comprising:
a host device; and
a memory system, the memory system including a controller and a three-dimensional non-volatile memory device, wherein the three-dimensional non-volatile memory device includes a three-dimensional memory array, and the three-dimensional memory array includes a plurality of word lines and a plurality of pages that are coupled, and wherein the controller coupled to the three-dimensional non-volatile memory device, and the controller is configured to:
receive first page data from the host device, wherein the received first page data corresponds to a first word line of the plurality of word lines in units of page data corresponding to one word line;
generate ith redundant array of independent disks (RAID) parity data based on the received first page data;
generate (i+1)th RAID parity data based on received second page data corresponding to calculated based on an (i+1)th word line and the ith RAID parity data, wherein i is a positive integer greater than or equal to 1; and
in response to value of i being w−1, write wth RAID parity data into the three-dimensional non-volatile memory device, wherein w is a number of word lines corresponding to one fund.