# US 12,602,016 B2 · Chip-scale atomic beam generating systems > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,602,016 B2 - Document ID: US12602016B2 - Status: Granted - Kind: B2 - Application number: 18/832,716 - Filed: 2023-01-24 - Published: 2025-03-27 - Granted: 2026-04-14 - Earliest claimed: 2022-01-24 - Assignees: Georgia Tech Research Corporation; National Institute of Standards and Technology - Applicants: Georgia Tech Research Corporation; National Institute of Standards and Technology - Inventors: Chandra Raman; Elizabeth Donley; John Kitching; Chao Li; Gabriela Martinez; William McGehee - Web page: https://patentgrep.com/patent/US12602016B2 ## CPC - G04F 5/14: using atomic clocks - G21K 1/02: using diaphragms, collimators - G04F: TIME-INTERVAL MEASURING (measuring pulse characteristics G01R, e.g. G01R29/02; in radar or like systems G01S) - G21K: HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES ## Abstract An exemplary embodiment of the present disclosure provides a chip-scale atomic beam system comprising an atomic vapor source, a plurality of channels, and a propagation chamber. The atomic vapor source chamber can comprise an atomic vapor source configured to emit an atomic vapor. The plurality of channels can have first ends and second ends. The first ends can be in fluid communication with the atomic vapor source chamber. The plurality of channels can be configured to collimate the atomic vapor as it moves through the plurality of channels from the first ends to the second ends. The propagation chamber can be in fluid communication with the second ends of the plurality of channels. The propagation chamber can have an internal pressure less than an internal pressure of the atomic vapor source chamber to enable the collimated atomic vapor to propagate through the propagation chamber. ## Claims ### Claim 1 An atomic beam system disposed in a chip or a chip-scale substrate comprising: an atomic vapor source chamber disposed in the chip or a chip-scale substrate and configured to emit an atomic vapor comprising atoms used to generate a thermal atomic beam from the atomic vapor; channels disposed in the chip or a chip-scale substrate and having lengths defined from first ends to second ends, the first ends in fluid communication with the atomic vapor source chamber, the channels having an orientation configured to generate a desired atomic flux and configured to passively collimate the atomic vapor as it moves through the lengths of the channels and generating the thermal atomic beam; a propagation chamber disposed in the chip or a chip-scale substrate and in fluid communication with the second ends of the channels, the propagation chamber configured to have an internal pressure less than an internal pressure of the atomic vapor source chamber to enable the thermal atomic beam to freely propagate through the propagation chamber; and one or more passive pumps selected from a group consisting of one or more non-evaporable getter pumps, one or more pumps comprising graphite, and a combination thereof, the one or more pumps configured to cause the internal pressure of the propagation chamber to be less than the internal pressure of the atomic vapor source chamber; wherein: the atomic beam system is configured to enable the thermal atomic beam to be interrogated in free propagation; and the passive collimation of the atomic vapor is based, at least in part, by one or more properties of the channels. ### Claim 2 (depends on 1) The atomic beam system of claim 1, wherein the atomic vapor source chamber comprises an atomic vapor source configured to emit the atomic vapor; wherein the atoms comprise alkali atoms, alkali earth atoms, or molecules thereof. ### Claim 3 (depends on 2) The atomic beam system of claim 2, wherein the atomic vapor source comprises Rubidium. ### Claim 4 (depends on 1) The atomic beam system of claim 1, wherein the atomic vapor source is configured to emit the atomic vapor when thermally or optically stimulated. ### Claim 5 (depends on 1) The atomic beam system of claim 1, wherein the system comprises a stack of one or more layers bonded together. ### Claim 6 (depends on 5) The atomic beam system of claim 5, wherein the stack comprises at least one silicon layer bonded to at least one glass layer. ### Claim 7 (depends on 6) The atomic beam system of claim 6, wherein the channels are formed into the at least one silicon layer. ### Claim 8 (depends on 1) The atomic beam system of claim 1, wherein the channels have an aspect ratio of between 1:1 and 1:100,000. ### Claim 9 A method of generating a thermal atomic beam with an atomic beam system disposed in a chip or a chip-scale substrate comprising: stimulating an atomic vapor source comprising alkali atoms, alkali earth atoms, or molecules thereof to emit an atomic vapor in a first chamber having a first internal pressure; passively collimating the atomic vapor in an array of channels to generate the thermal atomic beam; interrogating the thermal atomic beam in free propagation in a second chamber having a second internal pressure; and creating a pressure differential between the first and second chambers, the second chamber having a second internal pressure less than the first internal pressure; wherein: the creating comprises using one or more passive pumps configured to, at least in part, create the pressure differential between the first and second chambers; and the one or more pumps are selected from a group consisting of one or more non-evaporable getter pumps, one or more pumps comprising graphite, and a combination thereof. ### Claim 10 (depends on 9) The method of claim 9, wherein the channels are parallel to each other. ### Claim 11 (depends on 9) The method of claim 9, wherein the stimulating is thermally stimulating or optically stimulating. ### Claim 12 (depends on 9) The method of claim 9, wherein the array of channels have an aspect ratio of between 1:1 and 1:100,000. ### Claim 13 (depends on 9) The method of claim 9, wherein internal volumes of the first and second chambers, and the array of channels, are hermetically sealed. ### Claim 14 An atomic beam system disposed in a chip or a chip-scale substrate comprising: an atomic vapor source chamber configured to emit an atomic vapor comprising atoms used to generate a thermal atomic beam from the atomic vapor; channels having lengths defined from first ends to second ends, the first ends in fluid communication with the atomic vapor source chamber, the channels configured to passively collimate the atomic vapor as it moves through the lengths of the channels and generating the thermal atomic beam; a propagation chamber in fluid communication with the second ends of the channels, the propagation chamber configured to have an internal pressure less than an internal pressure of the atomic vapor source chamber to enable the thermal atomic beam to freely propagate through the propagation chamber; and one or more pumps configured to cause the internal pressure of the propagation chamber to be less than the internal pressure of the atomic vapor source chamber; wherein: the atomic beam system is configured to enable the thermal atomic beam to be interrogated in free propagation; the passive collimation of the atomic vapor is based, at least in part, by one or more properties of the channels; and the one or more pumps are selected from a group consisting of one or more passive non-evaporable getter pumps, one or more passive pumps comprising graphite, and a combination thereof. ### Claim 15 A method comprising: stimulating an atomic vapor source to emit an atomic vapor in a first chamber of an atomic beam system disposed in a chip or a chip-scale substrate, the first chamber having a first internal pressure; passively collimating the atomic vapor in an array of channels of the atomic beam system to generate a thermal atomic beam; interrogating the thermal atomic beam in free propagation in a second chamber of the atomic beam system; and inducing a pressure differential between the first and second chambers, the second chamber having a second internal pressure less than the first internal pressure; wherein: the inducing comprises using one or more passive pumps configured to, at least in part, induce the pressure differential between the first and second chambers; and the one or more pumps are selected from a group consisting of one or more passive non-evaporable getter pumps, one or more passive pumps comprising graphite, and a combination thereof.