Resist underlayer film-forming composition with suppressed degeneration of crosslinking agent
AssigneeNissan Chemical Corporation
InventorsShun Kubodera, Satoshi Kamibayashi, Yuki Endo
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AssigneeNissan Chemical Corporation
InventorsShun Kubodera, Satoshi Kamibayashi, Yuki Endo
Estimating the term…
A resist underlayer film forming composition which has high storage stability, has a low film curing start temperature, can cause the generation of a sublimated product in a reduced amount, and enables the formation of a film that is rarely eluted into a photoresist solvent; a method for forming a resist pattern using the resist underlayer film forming composition; and a method for manufacturing a semiconductor device. The resist underlayer film forming composition includes a crosslinkable resin, a crosslinking agent, a crosslinking catalyst represented by formula (I) and a solvent. (A-SO3)−(BH)+[wherein A represents a linear, branched or cyclic saturated or unsaturated aliphatic hydrocarbon group which may be substituted, an aryl group which may be substituted by a group other than a hydroxy group, or a heteroaryl group which may be substituted; and B represents a base having a pKa value of 6.5 to 9.5.]
A resist underlayer film-forming composition comprising a crosslinkable resin, a crosslinking agent, a crosslinking catalyst represented by the following formula (I), and a solvent:
A resist underlayer film-forming composition comprising an epoxy group-containing compound and/or an epoxy group-containing resin, a crosslinking catalyst represented by the following formula (I), and a solvent:
Dependencies are inferred from the claim text.