# US 12,601,087 B2 · Heat-resistant member

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- Number: US 12,601,087 B2
- Document ID: US12601087B2
- Status: Granted
- Kind: B2
- Application number: 18/269,888
- Filed: 2022-01-25
- Published: 2024-02-29
- Granted: 2026-04-14
- Earliest claimed: 2021-03-11
- Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho
- Applicants: Kabushiki Kaisha Toyota Chuo Kenkyusho
- Inventors: Daisuke Nakamura
- Web page: https://patentgrep.com/patent/US12601087B2

## CPC

- C30B 29/36: Carbides
- C30B 35/002: {Crucibles or containers}
- C04B 35/52: based on carbon, e.g. graphite
- C04B 41/87: Ceramics
- C30B 23/00: Single-crystal growth by condensing evaporated or sublimed materials
- C30B 23/06: Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE

## Abstract

A heat-resistant member comprises: a substrate made of isotropic graphite; a single-layered dense low-emissivity layer covering part of surfaces of the substrate; and a single-layered or multi-layered dense high-emissivity layer covering all or part of the remaining surfaces of the substrate. The dense low-emissivity layer has an outermost surface with an emissivity of εA, and has a relative density of 97% or more. The dense high-emissivity layer has an outermost surface with an emissivity of εB (>εA), and has a high-density region with a relative density of 97% or more in any portion between the outermost surface and the interface with the substrate. Preferably, an emissivity difference (εB−εA) is 0.1 or more.

## Claims

### Claim 1

A heat-resistant member, comprising:
a substrate made of isotropic graphite;
a single-layered dense low-emissivity layer covering part of surfaces of the substrate; and
a single-layered or multi-layered dense high-emissivity layer covering all or part of the remaining surfaces of the substrate, wherein the dense low-emissivity layer has an outermost surface with an emissivity of εA, and has a relative density of 97% or more, and the dense high-emissivity layer has an outermost surface with an emissivity of εB (>εA), and has a high-density region with a relative density of 97% or more in any portion between the outermost surface and the interface with the substrate.

### Claim 2 (depends on 1)

The heat-resistant member according to claim 1, wherein the heat-resistant member is used in growth of a compound semiconductor single crystal.

### Claim 3 (depends on 1)

The heat-resistant member according to claim 1, wherein the heat-resistant member satisfies εB−εA≥0.1.

### Claim 4 (depends on 1)

The heat-resistant member according to claim 1, wherein the dense high-emissivity layer includes:
a first layer having a relative density of 97% or more formed on the substrate side, and a second layer having an emissivity of εB formed on the outermost surface side.

### Claim 5 (depends on 1)

The heat-resistant member according to claim 1, wherein the dense low-emissivity layer includes TaC, WC, or a mixture of TaC and WC.

### Claim 6 (depends on 1)

The heat-resistant member according to claim 1, wherein the dense high-emissivity layer includes TaC, WC, or a mixture of TaC and WC.

### Claim 7 (depends on 1)

The heat-resistant member according to claim 1, wherein the heat-resistant member is a crucible to hold a raw material for sublimation used when a compound semiconductor single crystal is manufactured using a sublimation method, and
the crucible includes:
a crucible body made of the isotropic graphite;
the dense low-emissivity layer formed on all or part of
outer wall surfaces of the crucible body; and
the dense high-emissivity layer formed on all or part of inner wall surfaces of the crucible body.

### Claim 8 (depends on 1)

The heat-resistant member according to claim 1, wherein the heat-resistant member is a pedestal to hold a seed crystal for growth of a compound semiconductor single crystal, and the pedestal includes:
a pedestal body made of the isotropic graphite;
the dense low-emissivity layer formed on all or part of surfaces other than a bonding surface with the seed crystal among surfaces of the pedestal body on a side of a raw material for sublimation; and
the dense high-emissivity layer formed on all or part of surfaces on a side opposite to the surfaces of the pedestal body on the side of the raw material for sublimation.

### Claim 9 (depends on 1)

The heat-resistant member according to claim 1, wherein the heat-resistant member is a heat shield plate disposed between a crucible to hold a raw material for sublimation used in manufacturing a compound semiconductor single crystal using a sublimation method and a pedestal to hold a seed crystal for growth of the compound semiconductor single crystal, and the heat shield plate includes:
a heat shield plate body made of the isotropic graphite;
the dense low-emissivity layer formed on all or part of surfaces of the heat shield plate body on the pedestal side; and
the dense high-emissivity layer formed on all or part of surfaces on a side opposite to the surfaces of the heat shield plate body on the pedestal side.

### Claim 10

A heat-resistant member, comprising:
a substrate made of isotropic graphite;
a single-layered dense low-emissivity layer covering part of surfaces of the substrate; and
a single-layered or multi-layered dense high-emissivity layer covering all or part of the remaining surfaces of the substrate, wherein the dense low-emissivity layer has an outermost surface with an emissivity of εA, and has a relative density of 97% or more, and the dense high-emissivity layer has an outermost surface with an emissivity of εB (>εA), and has a high-density region with a relative density of 97% or more in any portion between the outermost surface and the interface with the substrate, wherein the dense low-emissivity layer includes TaC and/or WC and at least one of ZrC, Mo2C, and HfC and wherein the dense high-emissivity layer includes TaC and/or WC and at least one of ZrC, Mo2C, and HfC.

### Claim 11 (depends on 10)

The heat-resistant member according to claim 10, wherein the heat-resistant member is used in growth of a compound semiconductor single crystal.

### Claim 12 (depends on 10)

The heat-resistant member according to claim 10, wherein the heat-resistant member satisfies εB−εA≥0.1.

### Claim 13 (depends on 10)

The heat-resistant member according to claim 10, wherein the dense high-emissivity layer includes:
a first layer having a relative density of 97% or more formed on the substrate side, and a second layer having an emissivity of EB formed on the outermost surface side.

### Claim 14

A heat-resistant member, comprising:
a substrate made of isotropic graphite;
a single-layered dense low-emissivity layer covering part of surfaces of the substrate; and
a single-layered or multi-layered dense high-emissivity layer covering all or part of the remaining surfaces of the substrate, wherein the dense low-emissivity layer has an outermost surface with an emissivity of εA, and has a relative density of 97% or more, and the dense high-emissivity layer has an outermost surface with an emissivity of εB (>εA), and has a high-density region with a relative density of 97% or more in any portion between the outermost surface and the interface with the substrate, wherein the dense low-emissivity layer includes TaC and/or WC and at least one of ZrC, Mo2C, and HfC or wherein the dense high-emissivity layer includes TaC and/or WC and at least one of ZrC, Mo2C, and HfC.