Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
AssigneeKokusai Electric Corporation
InventorsYunosuke Sakai, Takashi Ozaki, Keigo Nishida
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Abstract
There is provided a technique that includes a first nozzle configured to supply a process gas to a process chamber that processes a substrate, a second nozzle arranged to be spaced apart by a predetermined distance from the first nozzle in a circumferential direction of the substrate and configured to supply an inert gas to the process chamber, and a reaction container defining the process chamber therein and including a first protrusion protruding outward to accommodate the first nozzle and a second protrusion protruding outward to accommodate the second nozzle.
Claims20
A substrate processing apparatus, comprising:
- a first nozzle configured to supply a process gas to a process chamber that processes a substrate;
- and
- a second nozzle configured to supply an inert gas to the process chamber, and
- wherein the inert gas supplied from the second nozzle is supplied at an angle directed away from the center of the wafer and toward the first nozzle to cause a flow direction of the process gas to be oriented toward a center of the substrate by forming a vortex flow of the inert gas to overlap with at least a part of a peripheral edge portion of the substrate.
A method of manufacturing a semiconductor device, comprising:
- loading a substrate into a process chamber that processes the substrate;
- and
- processing the substrate by supplying a process gas from a first nozzle to the process chamber, and
- wherein in the act of processing the substrate, an inert gas is supplied from a second nozzle and at an angle directed away from the center of the wafer and toward the first nozzle to cause a flow direction of the process gas to be oriented toward a center of the substrate by forming a vortex flow of the inert gas to overlap with at least a part of a peripheral edge portion of the substrate.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- loading a substrate into a process chamber of the substrate processing apparatus;
- and
- processing the substrate by supplying a process gas from a first nozzle to the process chamber, and
- wherein in the act of processing the substrate, an inert gas is supplied from a second nozzle and at an angle directed away from the center of the wafer and toward the first nozzle to cause a flow direction of the process gas to be oriented toward a center of the substrate by forming a vortex flow of the inert gas to overlap with at least a part of a peripheral edge portion of the substrate.
Dependencies are inferred from the claim text.