# US 12,601,055 B2 · Method of depositing atomic layer

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- Number: US 12,601,055 B2
- Document ID: US12601055B2
- Status: Granted
- Kind: B2
- Application number: 18/461,976
- Filed: 2023-09-06
- Published: 2024-03-28
- Granted: 2026-04-14
- Earliest claimed: 2022-09-27
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Hyunjun Ahn; Byounghoon Ji; Kyoungwoo Hong
- Web page: https://patentgrep.com/patent/US12601055B2

## CPC

- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C 16/45544: {characterized by the apparatus}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- H01J 2237/332: Coating
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method of depositing an atomic layer is provided. The method includes a plurality of deposition cycles. Each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angle while supplying a purge gas to the chamber, rotating the valve plate by a third angle while supplying a reactor to the chamber, and rotating the valve plate by the second angle while supplying the purge gas to the chamber, and wherein the first angle, the second angle, and the third angle are certain angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.

## Claims

### Claim 1

A method of depositing an atomic layer, the method comprising:
a plurality of deposition cycles,
wherein each of the plurality of deposition cycles comprises
rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded,
rotating the valve plate by a second angle while supplying a purge gas to the chamber,
rotating the valve plate by a third angle while supplying a reactor to the chamber, and
rotating the valve plate by the second angle while supplying the purge gas to the chamber, and
wherein the first angle, the second angle, and the third angle are angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.

### Claim 2 (depends on 1)

The method of claim 1, wherein a time for which the precursor is supplied is within a range of 0.01 sec to 5 sec.

### Claim 3 (depends on 1)

The method of claim 1, wherein, in the rotating of the valve plate by the first angle, pressure of the chamber is within a range of 0.1 Torr to 30 Torr.

### Claim 4 (depends on 1)

The method of claim 1, wherein the precursor and the reactor are supplied in a pulse form.

### Claim 5 (depends on 1)

The method of claim 1, wherein the second angle is greater than the first angle.

### Claim 6 (depends on 1)

The method of claim 1, wherein the third angle is less than the second angle and greater than the first angle.

### Claim 7 (depends on 1)

The method of claim 1, wherein the purge gas includes at least one of a hydrogen (H2) gas and a nitrogen (N2) gas.

### Claim 8 (depends on 1)

The method of claim 1, wherein a time for which the purge gas is supplied to the chamber is longer than at least one of a time for which the precursor is supplied to the chamber and a time for which the reactor is supplied to the chamber.

### Claim 9 (depends on 1)

The method of claim 1, wherein the precursor includes at least one of TiCl4, Ti(NEt2)4, Ti(NEtMe)4, WF6, WCl6MoCl2H2, MoCl5, and Mo(CO)6.

### Claim 10 (depends on 1)

The method of claim 1, wherein the reactor includes at least one of NH3, SiH4, B2H6, and H2.

### Claim 11

A method of depositing an atomic layer, the method comprising:
a plurality of deposition cycles,
wherein each of the plurality of deposition cycles comprises
rotating a valve plate included in an exhaust port by a first angle while adsorbing a precursor onto a chamber into which a substrate is loaded,
rotating the valve plate by a second angle while purging and removing a portion of the precursor which is not adsorbed onto the substrate, based on a purge gas,
rotating the valve plate by a third angle while adsorbing a reactor onto a surface of the substrate in the chamber, and
rotating the valve plate by a fourth angle while purging and removing a portion of the reactor which is not adsorbed onto the substrate, based on the purge gas,
wherein the first angle, the second angle, the third angle, and the fourth angle are angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and
wherein the third angle differs from the first angle and the fourth angle differs from the second angle.

### Claim 12 (depends on 11)

The method of claim 11, wherein in the rotating of the valve plate by the first angle a pressure of the chamber is a first pressure within a range of 0.1 Torr to 30 Torr.

### Claim 13 (depends on 12)

The method of claim 12, wherein in the rotating of the valve plate by the second angle the pressure of the chamber is a second pressure which is lower than the first pressure.

### Claim 14 (depends on 13)

The method of claim 13, wherein in the rotating of the valve plate by the third angle the pressure of the chamber is a third pressure within a range of 0.1 Torr to 30 Torr.

### Claim 15 (depends on 14)

The method of claim 14, wherein in the rotating of the valve plate by the fourth angle the pressure of the chamber is a fourth pressure which is lower than the third pressure.

### Claim 16 (depends on 11)

The method of claim 11, wherein the precursor and the reactor are supplied in a pulse form.

### Claim 17 (depends on 11)

The method of claim 11, wherein the precursor includes at least one of TiCl4, Ti(NEt2)4, Ti(NEtMe)4, WF6, WCl6MoCl2H2, MoCl5, and Mo(CO)6.

### Claim 18 (depends on 11)

The method of claim 11, wherein
the third angle is less than the second angle and greater than the first angle, and
the fourth angle is greater than each of the first angle, the second angle, and the third angle.

### Claim 19

A method of depositing an atomic layer, the method comprising:
a plurality of deposition cycles,
wherein each of the plurality of deposition cycles comprises
rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber, into which a substrate is loaded, in a pulse form for 0.01 sec to 5 sec,
rotating the valve plate by a second angle while supplying a first purge gas including at least one of a hydrogen gas and a nitrogen gas to the chamber,
rotating the valve plate by a third angle while supplying a reactor to the chamber in the pulse form for 0.01 sec to 5 sec, and
rotating the valve plate by a fourth angle while supplying a second purge gas including at least one of the hydrogen gas and the nitrogen gas to the chamber,
in the rotating of the valve plate by the first angle, pressure of the chamber is within a range of 0.1 Torr to 30 Torr,
the precursor includes at least one of TiCl4, Ti(NEt2)4, Ti(NEtMe)4, WF6, WCl6 MoCl2H2, MoCl5, and Mo(CO)6,
the first angle, the second angle, the third angle, and the fourth angle are angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port,
a time for which the first purge gas is supplied to the chamber is longer than a time for which the precursor is supplied to the chamber, and
the first angle differs from the second angle and the third angle, and the second angle is greater than the first angle.

### Claim 20 (depends on 19)

The method of claim 19, wherein,
in the rotating of the valve plate by the first angle, a pressure of the chamber is a first pressure within a range of 0.1 Torr to 30 Torr,
in the rotating of the valve plate by the second angle, the pressure of the chamber is a second pressure which is lower than the first pressure,
in the rotating of the valve plate by the third angle, the pressure of the chamber is a third pressure within the range of 0.1 Torr to 30 Torr, and
in the rotating of the valve plate by the fourth angle, the pressure of the chamber is a fourth pressure which is lower than the third pressure.