# US 12,601,047 B2 · Substrate processing method and selective deposition method using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,601,047 B2 - Document ID: US12601047B2 - Status: Granted - Kind: B2 - Application number: 18/113,974 - Filed: 2023-02-24 - Published: 2023-10-12 - Granted: 2026-04-14 - Earliest claimed: 2022-03-25 - Assignees: SK Specialty Co., Ltd; Industry-University Cooperation Foundation Hanyang University Erica Campus - Applicants: SK Specialty Co., Ltd.; Industry-University Cooperation Foundation Hanyang University ERICA Campus - Inventors: SungWoong Chung; Junghun Kawk; Jihun Lee; Woohee Kim; Jeongmin Lee; Seohyun Lee - Web page: https://patentgrep.com/patent/US12601047B2 ## CPC - C23C 16/04: Coating on selected surface areas, e.g. using masks - C23C 16/042: {using masks} - C23C 16/0227: {by cleaning or etching} - C23C 16/45525: {Atomic layer deposition [ALD]} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract There is provided a substrate processing method. The method includes providing a substrate having a first surface area and a second surface area having a different surface state than that of the first surface area, exposing the substrate to a substrate surface treatment composition containing a deposition inhibitor, and exposing the substrate to a post-treatment composition containing HF. ## Claims ### Claim 1 A substrate processing method comprising steps of: providing a substrate having a first surface area and a second surface area having a different surface state than that of the first surface area; exposing the substrate to a substrate surface treatment composition containing a deposition inhibitor; and after performing the step of exposing the substrate to the substrate surface treatment composition, exposing the substrate to a post-treatment composition containing HF, thereby removing deposition inhibitors adsorbed on any one of the first surface area and the second surface area. ### Claim 2 (depends on 1) The substrate processing method of claim 1, wherein the step of exposing the substrate to the post-treatment composition includes dipping the substrate in a liquid post-treatment composition containing HF. ### Claim 3 (depends on 2) The substrate processing method of claim 2, wherein the liquid post-treatment composition is a diluted HF solution of a concentration from 5% to 15%. ### Claim 4 (depends on 3) The substrate processing method of claim 3, wherein the liquid post-treatment composition is a 10% HF diluted solution. ### Claim 5 (depends on 1) The substrate processing method of claim 1, wherein the step of exposing the substrate to the post-treatment composition includes supplying a vapor phase post-treatment composition containing HF onto the substrate. ### Claim 6 (depends on 1) The substrate processing method of claim 1, wherein the deposition inhibitor has a head portion having different adsorption degrees for the first surface area and the second surface area, a tail portion disposed at an end opposite to the head portion, and a body portion connecting the head portion and the tail portion. ### Claim 7 (depends on 6) The substrate processing method of claim 6, wherein the head portion comprises a thiol or a phosphonic acid. ### Claim 8 (depends on 6) The substrate processing method of claim 6, wherein the head portion has a plurality of head groups. ### Claim 9 (depends on 6) The substrate processing method of claim 6, wherein the body portion has a chain structure composed of C4-C18 alkylene substituted or unsubstituted with fluorine (F). ### Claim 10 (depends on 9) The substrate processing method of claim 9, wherein the body portion has a plurality of the chain structures. ### Claim 11 (depends on 9) The substrate processing method of claim 9, wherein the tail portion has a non-reactive moiety corresponding to the chain structure of the body portion, and the non-reactive moiety is —CH3 or —CF3. ### Claim 12 (depends on 1) The substrate processing method of claim 1, wherein the step of exposing the substrate to the substrate surface treatment composition includes dipping the substrate in a liquid substrate surface treatment composition. ### Claim 13 (depends on 1) The substrate processing method of claim 1, wherein the step of exposing the substrate to the substrate surface treatment composition includes supplying a vaporized substrate surface treatment composition onto the substrate. ### Claim 14 (depends on 1) The substrate processing method of claim 1, wherein the first surface area is a conductive or metallic surface area and the second surface area is a dielectric surface area. ### Claim 15 (depends on 1) A method for area-selectively depositing a thin film on a substrate, comprising steps of: processing the substrate by the substrate processing method according to claim 1; and exposing the processed substrate to a deposition reactant gas to selectively deposit the thin film on a first surface area or a second surface area of the substrate. ### Claim 16 (depends on 15) The method of claim 15, wherein the first surface area is a conductive or metallic surface area and the second surface area is a dielectric surface area, and the thin film including a silicon-containing film, a hafnium-containing film, or a ruthenium-containing film is selectively deposited on the second surface area. ### Claim 17 (depends on 15) The method of claim 15, wherein the thin film is deposited by an ALD or CVD method.