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US 12,600,638 B2Granted
Low temperature process for the safe conversion of the siemens process side-product mixture to chloromonosilanes
AssigneeMomentive Performance Materials Inc.
InventorsNorbert Auner, Alexander Sturm
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Abstract
The invention relates to a process for the production of monosilanes of formula H4-nSiCln with n being 2, 3 or 4 comprising the step of subjecting a starting material composition comprising one or more disilanes with formula HxSi2Cl6-x containing at least one Si—H bond and optionally further silanes, in particular the side-product mixture of the Siemens Process or fractions thereof, to a reaction with a reaction-promoting agent chosen from—ether/HCI solutions—amines, phosphines, or mixtures thereof—ammonium halides, phosphonium halides, or mixtures thereof at temperatures below 200° C.
Claims20
A process for the production of chlorosilanes of the general formula (I)
- H4-nSiCl (I)
- wherein n is from 2 to 4,
- by reacting a starting material composition comprising one or more of the substrates selected from
- A) disilanes of the general formula (II)
- HoSi2Cl6-o (II)
- wherein o=1-6
- with one or more reaction-promoting agents F) selected from the group consisting of
- ether/HCl solutions,
- amines, phosphines, or mixtures thereof, and
- ammonium halides, phosphonium halides, or mixtures thereof,
- at temperatures below 200° C.,
- wherein the reaction is conducted in the presence of one or more reaction-promoting agents F) selected from amines, phosphines, ammonium halides or phosphonium halides, followed by removal of volatiles and subsequent conversion of the remainder to monosilanes by treatment with an HCl/ether solution,
- wherein the starting material composition contains disilanes as main components by weight,
- the starting material composition comprises more than 40 weight-% of disilanes by weight,
- the starting material composition comprises more than 15 weight-% pf hydrochlorodisilanes, and,
- wherein HSiCl3 is obtained as the main product by weight.
13 more elements
A process for the production of chlorosilanes of the general formula (I)
- H4-nSiCln (I)
- wherein n is from 2 to 4,
- by reacting a starting material composition comprising one or more of the substrates selected from
- A) disilanes of the general formula (II)
- HoSi2Cl6-o (II)
- wherein o=1-6
- and
- comprising one or more additional compounds containing at least one Si—H bond selected from
- G) monosilanes of the general formula (VII)
- RtSiCluH4-(t+u) (VII)
- wherein t=1-3,
- u=0-2,
- t+u=1-3,
- R is an organic residue,
- H) disilanes of the general formula (VIII)
- RvSi2ClwH6-(v+w) (VIII)
- wherein v=1-5,
- w=0-5,
- v+w=1-5,
- R is an organic residue,
- with one or more reaction-promoting agents F) selected from the group consisting of
- amines, phosphines, or mixtures thereof, and
- ammonium halides, phosphonium halides, or mixtures thereof,
- at temperatures below 200° C.,
- wherein the starting material composition contains disilanes as main components by weight,
- the starting material composition comprises more than 40 weight-% of disilanes by weight,
- the starting material composition comprises more than 15 weight-% of hydridochlorodisilanes,
- and
- wherein HSiCl3 is obtained as the main product by weight.
26 more elements
A process for the production of chlorosilanes of the general formula (I)
- H4-nSiCln (I)
- wherein n is from 2 to 4,
- by reacting a starting material composition comprising one or more of the substrates selected from
- A) disilanes of the general formula (II)
- HoSi2Cl6-0 (II)
- wherein o=1-6
- and
- further comprising one or more of the substrates selected from
- B) disiloxanes of the general formulae (III) or (IV)
- (HpSi2Cl5-p)2O (III)
- (HqCl3-qSi)2O (IV)
- wherein p=0 -5, q=0-2,
- with one or more reaction-promoting agents F) selected from the group consisting of
- ether/HCl solutions,
- amines, phosphines, or mixtures thereof, and
- ammonium halides, phosphonium halides, or mixtures thereof,
- at temperatures below 200° C.,
- wherein the starting material composition contains disilanes as main components by weight,
- the starting material composition comprises more than 40 weight-% of disilanes by weight,
- the starting material composition comprises more than 15 weight-% of hydridochlorodisilanes, and
- wherein HSiCl3 is obtained as the main product by weight.
18 more elements
A process for the production of chlorosilanes of the general formula (I)
- H4-nSiCln (I)
- wherein n is from 2 to 4,
- by reacting a starting material composition comprising one or more of the substrates selected from
- A) disilanes of the general formula (II)
- HoSi2Cl6-0 (II)
- wherein o=1-6
- and
- further comprising one or more of the substrates selected from
- D) perchlorinated oligo- and polysilanes of the general formula (VI)
- SisCl2s+2 (VI)
- wherein s=3-6,
- and
- E) chloro-, hydrido- and hydroxy-substituted polysilanes, including linear, branched, cyclic and cage-like chloro-, hydrido- and hydroxy-substituted oligo- and polysilanes, and chloro-, hydrido- and hydroxy-substituted polysiloxanes,
- with one or more reaction-promoting agents F) selected from the group consisting of
- ether/HCl solutions,
- amines, phosphines, or mixtures thereof, and
- ammonium halides, phosphonium halides, or mixtures thereof,
- at temperatures below 200° C.,
- wherein the starting material composition contains disilanes as main components by weight,
- the starting material composition comprises more than 40 weight-% of disilanes by weight,
- the starting material composition comprises more than 15 weight-% of hydridochlorodisilanes, and
- wherein HSiCl3 is obtained as the main product by weight.
19 more elements
Dependencies are inferred from the claim text.