Polishing apparatus and polishing method
AssigneeEbara Corporation
InventorMasaki Kinoshita
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AssigneeEbara Corporation
InventorMasaki Kinoshita
Estimating the term…
A polishing apparatus and a polishing method capable of accurately measuring a film thickness of a workpiece, such as wafer, substrate, or panel, used in manufacturing of semiconductor devices during polishing of the workpiece are disclosed. The processing system is configured to determine a film thickness of the workpiece based on relative reflectance data calculated by a calculation formula expressed as: the relative reflectance data=MD1/[BD1·k], where MD1 represents first intensity measurement data indicating intensity of the reflected light from the workpiece measured by the first spectrometer, BD1 represents the first base intensity data, and k represents a rate of change in second intensity measurement data with respect to the second base intensity data. The second intensity measurement data is indicative of intensity of the light of the light source measured by the second spectrometer during polishing of the workpiece.
A polishing apparatus for polishing a workpiece, comprising:
A polishing method of polishing a workpiece, comprising:
Dependencies are inferred from the claim text.