Substrate processing apparatus and substrate processing method

A substrate processing apparatus comprising:

• a holder that holds a substrate with a main surface of the substrate directed upwardly, the substrate having an at least partially circular outer periphery;
• a nozzle having a bottom portion in which a discharge port extending in one direction is formed;
• a mover that, above the substrate held by the holder, relatively moves at least one of the nozzle and the substrate with respect to another one in an intersecting direction that intersects with the one direction with a gap equal to or smaller than a predetermined distance provided between the bottom portion of the nozzle and the main surface of the substrate in order to cause a processing liquid to be discharged from the discharge port of the nozzle to the main surface of the substrate with use of capillary action;
• a controller configured to control the mover and relatively move the nozzle and the substrate at a moving speed determined based on an outer peripheral shape of the substrate and a change amount per unit time of a length in the one direction of a superimposed portion located above the substrate in the discharge port;
• and
• a pressure controller that applies a first pressure that is a negative pressure lower than an outside air pressure to the processing liquid in the nozzle,
• wherein one end portion of the substrate in the intersecting direction is a first end portion,
• another end portion of the substrate in the intersecting direction is a second end portion, and
• the pressure controller, in a case in which the nozzle and the substrate are relatively moved above the substrate from the first end portion of the substrate to a center of the substrate and then to the second end portion of the substrate, configured to relatively move the nozzle and the substrate at the moving speed, and apply a second pressure lower than the first pressure to the processing liquid in the nozzle in a period during which the nozzle is located above a position between the center of the substrate and the second end portion.