Quasi-monolithic integrated packaging architecture with mid-die serializer/deserializer

An IC package, comprising:

• a first IC die in a first layer, wherein the first IC die is a single die;
• a second IC die and a third IC die in a second layer;
• and
• an interposer,
• wherein:
• the second layer is between the first layer and the interposer,
• the first layer is coupled to the second layer by interconnects having a pitch of less than 10 micrometers between adjacent ones of the interconnects,
• a first circuit block in the first IC die is coupled to and at least partially vertically overlapping a first SERDES circuit in the second IC die,
• a second circuit block in the first IC die is coupled to and at least partially vertically overlapping a second SERDES circuit in the third IC die, and
• the first SERDES circuit and the second SERDES circuit are coupled by a conductive pathway through the interposer.

An IC structure, comprising:

• a first circuit in a single die in a first layer, the first circuit coupled to a first SERDES circuit in a second layer by a first set of interconnects having a pitch of less than 10 micrometers between adjacent ones of the first set of interconnects;
• a second circuit in the single die in the first layer, the second circuit coupled to a second SERDES circuit in the second layer by second first set of interconnects having a pitch of less than 10 micrometers between adjacent ones of the second set of interconnects;
• and
• a conductive pathway between the first SERDES circuit and the second SERDES circuit,
• wherein:
• the first layer is not coplanar with the second layer.