Semiconductor package and method

A semiconductor package comprising:

• an interposer having a first edge and a second edge, wherein the first edge and the second edge intersect at a first corner of the interposer, the interposer further comprising:
• a plurality of insulating layers;
• and
• a plurality of conductive lines in the plurality of insulating layers;
• a package component bonded to a first side of the interposer, wherein the package component comprises a semiconductor die;
• a substrate bonded to a second side of the interposer;
• an underfill between the interposer and the substrate, wherein the underfill encircles the interposer in a top view;
• and
• a divider structure disposed on the substrate and adjacent the first corner, wherein the underfill encircles the divider structure in the top view, wherein the divider structure comprises a first segment extending along the first edge, wherein a first portion of the underfill is disposed between the first segment and the first edge, and wherein a thickness of the first portion of the underfill is smaller than 1 mm.

A semiconductor package comprising:

• a package component, the package component further comprising:
• an interposer, wherein the interposer comprises a first edge and a second edge, and wherein the first edge and the second edge meet at a first corner of the interposer;
• and
• a semiconductor die bonded to a first side of the interposer;
• a substrate bonded to the package component on a second side of the interposer;
• an underfill between the package component and the substrate, wherein the underfill encircles the package component in a top view, and wherein the underfill has a first coefficient of thermal expansion;
• and
• a dam structure on the substrate adjacent the first corner in the top view, wherein the dam structure is in direct contact with the underfill, wherein the dam structure comprises a first segment extending along the first edge and a second segment extending along the second edge, and wherein the dam structure has a second coefficient of thermal expansion smaller than the first coefficient of thermal expansion.