Semiconductor structure and method for forming the same

A method of forming a semiconductor structure, comprising:

• trimming a sidewall of a first substrate;
• bonding the first substrate to a carrier;
• forming a dielectric material, wherein the dielectric material comprises a first portion on a top surface of the first substrate and a second portion on the sidewall of the first substrate;
• removing the first portion of the dielectric material;
• removing the carrier from the first substrate;
• and
• dividing the first substrate to form a plurality of edge dies, wherein each of the edge dies comprises the dielectric material on a sidewall of the edge dies.

A method of forming a semiconductor structure, comprising:

• bonding a trimmed substrate to a carrier, wherein the trimmed substrate has a recess on a sidewall of the trimmed substrate;
• removing a portion of the trimmed substrate over the recess;
• forming a dielectric material around the trimmed substrate;
• etching the trimmed substrate to expose a through-silicon via in the trimmed substrate;
• forming a passivation layer over the trimmed substrate and the dielectric material;
• performing a planarization process to level a top surface of the passivation layer and a top surface of the dielectric material;
• forming a first conductive pad over the through-silicon via;
• bonding the trimmed substrate to a base substrate;
• and
• dicing the trimmed substrate and the base substrate to form a semiconductor die.