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US 12,598,994 B2Granted
Multilayer encapsulation for humidity robustness and related fabrication methods
AssigneeWolfspeed, Inc.
InventorsKyoung-Keun Lee, Fabian Radulescu, Scott Sheppard, Daniel Namishia
Life of this patent
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Abstract
A semiconductor die includes a semiconductor body, and a multi-layer environmental barrier on the semiconductor body. The multi-layer environmental barrier includes first and second sublayers of first and second oxide materials, respectively, where the first oxide material is different than the second oxide material. Related devices and fabrication methods are also discussed.
Claims39
A semiconductor die, comprising:
- a semiconductor body comprising an inorganic semiconductor material;
- and
- a multi-layer environmental barrier on the semiconductor body, the multi-layer environmental barrier comprising a repeating layer structure including first and second sublayers of first and second oxide materials, respectively, wherein the first oxide material comprises a non-silicon oxide and the first sublayer is thicker and denser than the second sublayer.
A semiconductor die comprising:
- a semiconductor body comprising a Group III-nitride or silicon carbide material;
- and
- a multi-layer environmental barrier on the semiconductor body, the multi-layer environmental barrier comprising a repeating layer structure including two or more sublayers of different thicknesses, the two or more sublayers comprising a metal insulating material sublayer and a semiconductor insulating material sublayer having a density that is greater than a density of silicon nitride, wherein the metal insulating material sublayer is thicker than the semiconductor insulating material sublayer.
A semiconductor die comprising:
- a semiconductor body comprising an inorganic semiconductor material;
- and
- a multi-layer environmental barrier on the semiconductor body, the multi-layer environmental barrier comprising a repeating layer structure including a first insulating sublayer of a first material and a second insulating sublayer of a second material,
- wherein a density of the first material is greater than a density of the second material, and
- wherein a ratio of a first thickness of the first insulating sublayer to a second thickness of the second insulating sublayer is about 2:1 or more.
2 more elements
A method of fabricating a semiconductor die, the method comprising:
- providing a semiconductor body comprising an inorganic semiconductor material;
- and
- forming a multi-layer environmental barrier on the semiconductor body, the multi-layer environmental barrier comprising a repeating layer structure including first and second sublayers of first and second oxide materials, respectively, wherein the first oxide material comprises a non-silicon oxide and the first sublayer is thicker and denser than the second sublayer.
Dependencies are inferred from the claim text.