Semiconductor structure and forming method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Feng Kao, Dun-Nian Yaung, Hsing-Chih Lin, Jen-Cheng Liu
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a first die and a second die. The first die includes a substrate, an interconnection structure and a capacitor structure. The substrate has a front-side surface and a back-side surface. The interconnection structure is disposed over the front-side surface. The capacitor structure extends from the back-side surface to the front-side surface and into the interconnection structure. The second die is disposed over the back-side surface and is bonded to the first die. A method for forming a semiconductor structure is also provided.
Claims20
A method for forming a semiconductor structure, comprising:
- receiving a first die having a first substrate and a first interconnection structure over the first substrate, wherein the first substrate has a first front-side surface and a first back-side surface;
- bonding a second die to the first die, the second die having a second substrate and a second interconnection structure over the second substrate;
- forming a trench penetrating through the first substrate and the first interconnection structure, wherein the trench exposes a portion of the second die;
- and
- forming a capacitor structure in the trench,
- wherein the forming of the capacitor structure further comprises:
- forming a first conductive layer lining sidewalls and an innermost surface of the trench and over the first back-side surface of the first substrate;
- forming a first dielectric layer over the first conductive layer;
- forming a second conductive layer over the first dielectric layer;
- forming a second dielectric layer over the second conductive layer;
- and
- patterning the second dielectric layer, the second conductive layer, the first dielectric layer and the first conductive layer to form the capacitor structure.
A method for forming a semiconductor structure, comprising:
- bonding a first die and a second die, wherein the first die comprises a first substrate and a first interconnection structure over the first substrate, and the second die comprises a second substrate and a second interconnection structure over the second substrate;
- forming a first trench penetrating through the first die and a portion of the second die, wherein a metal feature of the second interconnection structure is exposed through the first trench;
- and
- forming a capacitor structure in the first trench, wherein the capacitor structure is coupled to the metal feature of the second interconnection structure,
- wherein the forming of the capacitor structure further comprises:
- forming a first conductive layer lining sidewalls and an innermost surface of the first trench and over a back side surface of the first substrate;
- forming a first dielectric layer over the first conductive layer;
- forming a second conductive layer over the first dielectric layer;
- forming a second dielectric layer over the second conductive layer;
- and
- patterning the second dielectric layer, the second conductive layer, the first dielectric layer and the first conductive layer to form the capacitor structure.
A method for forming a semiconductor structure, comprising:
- bonding a first die and a second die, wherein the first die comprises a first substrate and a first interconnection structure over the first substrate, and the second die comprises a second substrate and a second interconnection structure over the second substrate;
- forming a first trench penetrating through the first die and a portion of the second die, wherein metal features of the second interconnection structure are separated from the first trench;
- and
- forming a capacitor structure in the first trench,
- wherein the forming of the capacitor further comprises:
- forming a first conductive layer lining sidewalls and an innermost surface of the first trench and over a back side surface of the first substrate;
- forming a first dielectric layer over the first conductive layer;
- forming a second conductive layer over the first dielectric layer;
- forming a second dielectric layer over the second conductive layer;
- and
- patterning the second dielectric layer, the second conductive layer, the first dielectric layer and the first conductive layer to form the capacitor structure.
Dependencies are inferred from the claim text.