Dual contact and power rail for high performance standard cells
AssigneeApple Inc.
InventorsSambasivan Narayan, Praveen Raghavan
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Abstract
A standard cell layout that may be implemented in FinFET devices or nanosheet FET devices is disclosed. The standard cell layout includes power supply connections from both a topside metal layer and a backside metal layer. A device in the standard cell may be connected to both the topside metal layer and the backside metal layer. Source/drain regions of the device may be connected the metal layers using via contacts within the standard cell layout. Connections to power supply rails from the topside metal layer and the backside metal layer may also be included in the standard cell layout. The rails may be connected to a power supply such that the power supply provides power to the device through both the topside and backside metal layers.
Claims20
An apparatus, comprising:
- a substrate;
- a transistor having a gate region, a source region, and a drain region located above the substrate in a vertical dimension perpendicular to the substrate;
- a first metal layer located above the transistor in the vertical dimension;
- a second metal layer located below the transistor in the vertical dimension;
- a first via providing a connection between the source region and the first metal layer;
- a second via providing a connection between the source region and the second metal layer;
- a first rail connected to both the first and second metal layers;
- a second rail connected to both the first and second metal layers;
- and
- wherein the source region is coupled to at least one of the first rail and the second rail through both the first and second metal layers.
An apparatus, comprising:
- a substrate;
- a transistor having a gate region, a source region, and a drain region located above the substrate in a vertical dimension perpendicular to the substrate;
- a first metal layer located above the transistor in the vertical dimension;
- a second metal layer located below the transistor in the vertical dimension;
- a first via providing a connection between the source region and the first metal layer;
- a second via providing a connection between the source region and the second metal layer;
- a first rail connected to both the first and second metal layers;
- a second rail connected to both the first and second metal layers;
- wherein the source region is coupled to the first rail through both the first and second metal layers;
- and
- wherein the drain region is coupled to the second rail through both the first and second metal layers.
Dependencies are inferred from the claim text.