Conductive via with improved gap filling performance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Yu Lin, Yao-Wen Chang
Life of this patent
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Abstract
A dielectric structure is formed over a layer than contains a conductive component. An opening is formed in the dielectric structure. The opening exposes an upper surface of the conductive component. A first deposition process is performed that deposits a first conductive layer over the dielectric structure and partially in the opening. A treatment process is performed on a first portion of the first conductive layer formed over the dielectric structure. The treatment process introduces a non-metal material to the first portion of the first conductive layer. After the treatment process has been performed, a second deposition process is performed that at least partially fills the opening with a second conductive layer without trapping a gap therein.
Claims20
A method, comprising:
- forming a dielectric structure over a layer that contains a conductive component;
- forming an opening in the dielectric structure, wherein the opening exposes an upper surface of the conductive component;
- performing a first deposition process that deposits a first conductive layer over the dielectric structure and partially in the opening;
- performing a treatment process on a first portion of the first conductive layer formed over the dielectric structure, wherein the treatment process includes a plasma treatment process that uses H2, O2, or CO2 and introduces a non-metal material to the first portion of the first conductive layer;
- after the treatment process has been performed, performing a second deposition process that partially fills the opening with a second conductive layer without trapping a gap therein;
- and
- performing a third deposition process that deposits a third conductive layer over the second conductive layer, wherein a portion of the third conductive layer protrudes into and fills a portion of the opening, and wherein the third deposition process is performed with a faster flow rate or a greater power level than the second deposition process.
A method, comprising:
- forming a dielectric structure over a conductive component in a cross-sectional side view;
- etching an opening that extends vertically through the dielectric structure in the cross-sectional side view, wherein the opening exposes a portion of the conductive component;
- forming a conductive layer that partially fills the opening, wherein a portion of the conductive layer disposed near an upper portion of the opening protrudes laterally in the cross-sectional side view;
- introducing a non-metal material to at least the portion of the conductive layer that protrudes laterally, wherein the non-metal material is introduced via a plasma treatment process, and wherein H2, O2, or CO2 is introduced as the non-metal material;
- forming an additional conductive material partially in the opening after the non-metal material has been introduced;
- and
- completely filling the opening with a further conductive material, wherein the further conductive material is formed at a faster rate than the additional conductive material.
A method, comprising:
- forming a dielectric structure over a conductive component;
- etching an opening in the dielectric structure, the opening exposing the conductive component;
- performing a first deposition process, the first deposition process partially filling the opening with a first conductive layer that has an overhang in a cross-sectional side view;
- performing a plasma treatment process that uses H2, O2, or CO2, wherein the overhang of the first conductive layer substantially prevents the plasma treatment process from reaching a bottom portion of the first conductive layer;
- after the plasma treatment process has been performed, performing a second deposition process that partially fills the opening with a second conductive layer;
- and
- performing a third deposition process that completely fills the opening with a third conductive layer, wherein the third deposition process is performed at a faster rate than the second deposition process.
Dependencies are inferred from the claim text.