Through silicon via interconnection structure and method of forming same, and quantum computing device

A through silicon via interconnection structure, comprising:

• a silicon wafer, having a first surface and a second surface opposite to each other;
• a through silicon via, penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer;
• a superconducting thin film located in a groove in a target surface of the first surface and the second surface of the silicon wafer, and located in the through silicon via;
• and
• an insulation layer, located in the groove and the through silicon via, and on a side of the superconducting thin film close to the silicon wafer.

A quantum computing device, comprising:

• a first chip;
• a second chip;
• and
• a through silicon via interconnection structure, comprising:
• a silicon wafer, having a first surface and a second surface opposite to each other;
• a through silicon via, penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer;
• and
• a superconducting thin film located in a groove in a target surface of the first surface and the second surface of the silicon wafer, and located in the through silicon via;
• and
• the first chip, the through silicon via interconnection structure, and the second chip being stacked in sequence, and the first chip and the second chip being interconnected through the through silicon via interconnection structure.