Temperature controlling method and substrate processing apparatus

A substrate processing apparatus comprising:

• a stage in which a placement surface is formed, wherein a substrate is placed on the placement surface;
• in which a flow path is formed, wherein a temperature-controlling medium flows through the flow path;
• and in which a discharge port is formed, wherein heat transfer gas is discharged toward the placement surface via the discharge port;
• a temperature-controlling medium supply unit that adjusts a temperature of the temperature-controlling medium, and supplies the temperature-controlling medium whose temperature is adjusted;
• a gas supplying unit that supplies the heat transfer gas that is discharged from the discharge port;
• a first acquisition unit that acquires:
• a temperature TB of the temperature-controlling medium before a temperature change during execution of a plurality of processes n (n is identifier of process and is natural number that is greater than one) in each of which heat is input to the substrate;
• and
• for each of the processes n, a pressure Pn of the heat transfer gas supplied from the gas supplying unit and a temperature TWn of the substrate;
• a second acquisition unit that acquires:
• for each of the processes n after the temperature change while using a temperature of the temperature-controlling medium as the temperature TB, a temperature TW′n,max of the substrate in the corresponding process n in a case where a pressure of the heat transfer gas supplied from the gas supplying unit is reduced to be lower than the pressure Pn;
• and
• a temperature TW′n,min of the substrate in the corresponding process n in a case where a pressure of the heat transfer gas supplied from the gas supplying unit is increased to be greater than the pressure Pn;
• and
• an adjustment unit that adjusts a temperature of the temperature-controlling medium to a temperature TB″ that satisfies a following formula (2);
• and adjusts, for each of the processes n, a pressure of the heat transfer gas supplied from the gas supplying unit such that a temperature of the substrate is the temperature TWn.
• TB+max(TWn−TW′n,max)≤TB″≤TB+min(TWn−TW′n,min) (2)