Wafer treatment method
AssigneeNissan Chemical Corporation
InventorsTomoya Ohashi, Suguru Sassa, Noriaki Fujitani
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Abstract
A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for detecting impurities on a surface of a wafer for manufacturing semiconductors includes: a step for coating the surface of the wafer with a film-forming composition, and performing baking to form a film; and then a step for detecting impurities by means of a wafer inspection tool.
Claims6
A method for detecting fluorine atom-containing impurities on a surface of a wafer for manufacturing a semiconductor, comprising the steps of:
- coating a film-forming composition to a surface of the wafer and baking the film-forming composition to form a film having a thickness of 200 to 800 nm so as to confine the fluorine atom-containing impurities on the film formed on the wafer;
- and
- after the step of coating, detecting the confined fluorine atom-containing impurities using a wafer inspection tool.
Dependencies are inferred from the claim text.