Vapor deposition device and vapor deposition method

A vapor deposition device, comprising:

• a reaction chamber, including at least a susceptor and a carrier lift pin, for forming a CVD film on a wafer,
• a gas supply device configured to supply raw material gas for growing the CVD film to the reaction chamber, and
• a ring-shaped carrier having an opening in a middle portion that does not contact the wafer, and the ring shaped carrier is configured to support an outer periphery of the wafer such that a space is provided between the susceptor and a portion of the wafer provided in the middle portion of the ring-shaped carrier, wherein
• the reaction chamber is provided with the susceptor on which the ring-shaped carrier supporting the wafer is placed, and the carrier lift pin which moves the ring-shaped carrier supporting the wafer vertically relative to, and independent of, the susceptor,
• the carrier lift pin is installed outside of an outer edge of the wafer in a state in which the ring-shaped carrier supporting the wafer is mounted on the susceptor is viewed in a plan view,
• the carrier lift pin is installed such that a center of the carrier lift pin is positioned outside of the outer edge of the wafer by 7 mm or more in a state in which the ring-shaped carrier supporting the wafer is mounted on the susceptor is viewed in the plan view, and
• the susceptor includes at least a through hole extended vertically through the susceptor in the plan view, in which the carrier lift pin is provided, such that the carrier lift pin is configured to press against the bottommost surface of the ring-shaped carrier.