Epitaxial formation with treatment and semiconductor devices resulting therefrom

A method comprising:

• forming a source/drain region in a fin;
• forming a gate structure over the fin;
• depositing a dielectric layer over the source/drain region and the gate structure;
• etching an opening in the dielectric layer to expose the source/drain region;
• forming a dielectric liner over the dielectric layer and over the source/drain region in the opening;
• etching a portion of the dielectric liner to expose the source/drain region;
• forming an epitaxial cap over the source/drain region, the epitaxial cap comprising a crystalline form of a first epitaxial material;
• flowing first precursors over the epitaxial cap, the first precursors having a higher etch selectivity to an amorphous form of the first epitaxial material than to the crystalline form of the first epitaxial material;
• converting at least a portion of the epitaxial cap into a silicide region;
• and
• forming a contact plug over the silicide region within the opening.

A method comprising:

• forming a dummy gate structure over a fin;
• forming a gate spacer over the fin and along the dummy gate structure;
• etching a recess in the fin adjacent to the gate spacer;
• forming an epitaxial region in the recess and epitaxial nodules along a sidewall of the gate spacer, the sidewall comprising first portions covered by the epitaxial nodules and second portions exposed between the epitaxial nodules;
• and
• performing an etch process to remove the epitaxial nodules, performing the etch process comprising etching the second portions of the sidewall of the gate spacer.