Semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• a semiconductor substrate, comprising:
• a base portion comprising a first active area and a second active area adjacent to the first active area;
• a semiconductor bar portion located over the base portion corresponding to the first active area;
• a first set of semiconductor branch portions comprising a plurality of first semiconductor branch portions extending from a first sidewall of the semiconductor bar portion onto the base portion corresponding to the second active area, and an extending direction of each of the first semiconductor branch portions different from an extending direction of the semiconductor bar portion;
• and
• a first set of isolation structures comprising a first isolation structure and a second isolation structure, wherein the first set of isolation structures is formed over the base portion corresponding to the second active area, the first isolation structure and the second isolation structure are formed between different adjacent first semiconductor branch portions, and the first isolation structure and the second isolation structure are alternately arranged along the extending direction of the semiconductor bar portion;
• wherein a first interface between the first isolation structure and the semiconductor bar portion and a second interface between the second isolation structure and the semiconductor bar portion are flat, and wherein the first interface and the second interface are staggered from each other along the extending direction of the semiconductor bar portion.