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US 12,598,930 B2Granted
Conformal thermal CVD with controlled film properties and high deposition rate
AssigneeLam Research Corporation
InventorsAwnish Gupta, Bart J. Van Schravendijk, Frank Loren Pasquale, Adrien LaVoie, Jason Alexander Varnell, Praneeth Ramasagaram, Joseph R. Abel, Jennifer Leigh Petraglia, Dustin Zachary Austin
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Abstract
Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.
Claims16
A method for processing substrates in a chamber, the method comprising:
- providing a semiconductor substrate having a feature to a chamber;
- and
- depositing dielectric material in the feature on the semiconductor substrate by:
- introducing a deposition precursor and a reactant to the chamber housing the semiconductor substrate to expose the semiconductor substrate to a plasma-free environment comprising the deposition precursor and the reactant, and
- introducing a passivation gas to the chamber and igniting a passivation plasma in a passivation gas ambient,
- wherein the passivation plasma preferentially etches dielectric material at or near a feature opening.
3 more elements
A method for processing substrates in a chamber, the method comprising:
- providing a semiconductor substrate having a feature to a chamber;
- and
- depositing dielectric material comprising silicon oxide in the feature on the semiconductor substrate by:
- introducing a deposition precursor and a reactant to the chamber housing the semiconductor substrate to expose the semiconductor substrate to a plasma-free environment comprising the deposition precursor and the reactant, and
- exposing the dielectric material to a densification plasma in the chamber generated in an inert gas ambient.
2 more elements
Dependencies are inferred from the claim text.