MRAM device with hammerhead profile

Abstract

A magnetic tunnel junction (MTJ) stack with a hammerhead profile, including vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode, where the bottom electrode and the reference layer each include a first width, and the top electrode, the free layer and the tunneling barrier, each include a second width greater than the first width. Forming vertically aligned layers of a bottom electrode and a reference layer on the bottom electrode, of a magnetic tunnel junction (MTJ), where the bottom electrode, the reference layer and the hard mask, each include a first width, and separately forming vertically aligned layers of a tunneling barrier, a free layer and a top electrode on the free layer, where the tunneling barrier, the free layer and the top electrode each include a second width, where the second width is greater than the first width.

Dependencies are inferred from the claim text.