Advanced MRAM device structure having hyperboloid shape

An MRAM Cell comprising:

• a dielectric cap;
• a lower section located on top of the dielectric cap, wherein the lower section includes/comprises a bottom electrode, a synthetic anti-ferromagnet layer, and a reference layer, wherein in a sidewall of each of the bottom electrode, the synthetic anti-ferromagnet layer, and the reference layer are angled relative to the vertical plane perpendicular to a top surface of the dielectric cap;
• a first dielectric liner located on the sidewalls of each of the bottom electrode, the synthetic anti-ferromagnet layer, and the reference layer, wherein the first dielectric liner is comprised of a first material;
• an upper section that includes a tunnel barrier, a free layer, and a top electrode, wherein the tunnel barrier has a horizontal bottom section located on top of the reference layer, wherein the tunnel barrier has angled vertical sided sections;
• a second dielectric liner located on a side section of the tunnel barrier, wherein the second dielectric liner is comprised of a second material, and wherein the angled side sections of the tunnel barrier are located on top of the second dielectric liner.