Display device
AssigneeSharp Kabushiki Kaisha
InventorsHirohide Mimura, Shogo Murashige, Yujiro Takeda
Life of this patent
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Abstract
A TFT layer is provided that includes a stack of, in sequence, display wires, a protective film, a first flattening film, a metal wire layer and a second flattening film; further, a frame region has a first trench and a second trench respectively provided in the first flattening film and the second flattening film and overlapping the display wires; further, a second electrode is provided to cover the first trench and the second trench; further the protective film includes a first protective film and a third protective film formed of a silicon oxide film, and a second protective film formed of a silicon nitride film.
Claims20
A display device comprising:
- a base substrate;
- a thin-film transistor layer provided on the base substrate and including a stack of, in sequence, a plurality of display wires, a protective film, a first flattening film, a metal wire layer, and a second flattening film;
- and
- a light-emitting element layer provided on the thin-film transistor layer and including a plurality of first electrodes, a plurality of light-emitting layers, and a common second electrode stacked sequentially in correspondence with a plurality of sub-pixels forming a display region,
- wherein the plurality of display wires is provided to extend in parallel with each other in the display region, and to extend toward a terminal section disposed in a frame region around the display region,
- in the frame region, a first trench overlapping each of the plurality of display wires and passing through the first flattening film is provided in the first flattening film, and a second trench overlapping each of the plurality of display wires and passing through the second flattening film is provided in the second flattening film,
- the common second electrode is provided to cover the first trench and the second trench,
- the protective film includes a first protective film, a second protective film, and a third protective film sequentially stacked on the plurality of display wires,
- the first protective film and the third protective film are formed of a silicon oxide film, and
- the second protective film is formed of a silicon nitride film,
- a drive circuit including a plurality of extra-pixel thin-film transistors is provided between the first trench and the display region and between the second trench and the display region,
- the protective film has an opening exposing the drive circuit from the protective film, and
- in a plan view, an edge of the opening is provided to entirely surround the drive circuit.
A display device comprising:
- a base substrate;
- a thin-film transistor layer provided on the base substrate and including a stack of, in sequence, a plurality of display wires, a protective film, a first flattening film, a metal wire layer, and a second flattening film;
- and
- a light-emitting element layer provided on the thin-film transistor layer and including a plurality of first electrodes, a plurality of light-emitting layers, and a common second electrode stacked sequentially in correspondence with a plurality of sub-pixels forming a display region,
- wherein the plurality of display wires is provided to extend in parallel with each other in the display region, and to extend toward a terminal section disposed in a frame region around the display region,
- in the frame region, a first trench overlapping each of the plurality of display wires and passing through the first flattening film is provided in the first flattening film, and a second trench overlapping each of the plurality of display wires and passing through the second flattening film is provided in the second flattening film,
- the common second electrode is provided to cover the first trench and the second trench,
- the protective film includes a first protective film, a second protective film, and a third protective film sequentially stacked on the plurality of display wires,
- the first protective film and the third protective film are formed of a silicon oxide film,
- the second protective film is formed of a silicon nitride film,
- a drive circuit including a plurality of extra-pixel thin-film transistors is provided between the first trench and the display region and between the second trench and the display region,
- the protective film has an opening exposing the drive circuit from the protective film, and
- in a plan view, an edge of the opening is provided to surround each of the plurality of extra-pixel thin-film transistors.
Dependencies are inferred from the claim text.