Display panel and display device having two active layers of two transistors of different material

A display device, comprising a display panel, wherein the display panel comprises:

• a substrate;
• a first transistor arranged on the substrate, wherein the first transistor comprises a first active layer, and a material of the first active layer is an amorphous oxide semiconductor;
• a first interlayer insulating layer covering a side of the first transistor away from the substrate;
• and
• a second transistor disposed on a side of the first interlayer insulating layer away from the first transistor, wherein the second transistor comprises a second active layer, and a material of the second active layer is a polycrystalline oxide semiconductor;
• wherein the first transistor further comprises a first gate insulating layer covering the first active layer, a first gate electrode, a first source electrode, and a first drain electrode of the first transistor are located on a side of the interlayer insulating layer away from the second transistor, and located on a side of the first gate insulating layer away from the substrate;
• and
• wherein the display panel further comprises a first barrier layer disposed between the first interlayer insulating layer and the second transistor.

A display panel, comprising:

• a substrate;
• a first transistor arranged on the substrate, wherein the first transistor comprises a first active layer, and a material of the first active layer is an amorphous oxide semiconductor;
• a first interlayer insulating layer covering a side of the first transistor away from the substrate;
• and
• a second transistor disposed on a side of the first interlayer insulating layer away from the first transistor, wherein the second transistor comprises a second active layer, and a material of the second active layer is a polycrystalline oxide semiconductor;
• wherein the first transistor further comprises a first gate insulating layer covering the first active layer, a first gate electrode, a first source electrode, and a first drain electrode of the first transistor are located on a side of the interlayer insulating layer away from the second transistor, and located on a side of the first gate insulating layer away from the substrate;
• and
• wherein the second transistor comprises a second gate electrode, a second source electrode, and a second drain electrode, the second source electrode and the second drain electrode are arranged on a side of the second active layer away from the substrate, the second gate electrode is located on a side of the second active layer close to the second source electrode, the display panel further comprises a third barrier layer, and the third barrier layer is disposed between the second gate electrode and the second active layer.