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US 12,598,852 B2Granted
Light-emitting element and display device comprising same
AssigneeLG Electronics Inc.
InventorsSunghyun Hwang, Mihee Heo, Kiseong Jeon
Life of this patent
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Abstract
The light emitting device includes an active layer, a plurality of first conductivity-type semiconductor layers under the active layer, and a plurality of second conductivity-type semiconductor layers on the active layer. The plurality of first conductivity-type semiconductor layers include an adsorption prevention layer spaced farthest from the active layer. The adsorption prevention layer can include Alx1Ga(1-x1)InP, x1 can be 0.6 or less, and the thickness of the adsorption prevention layer can be 2 μm or less.
Claims20
A light emitting device comprising:
- an active layer;
- a plurality of first conductivity-type semiconductor layers under the active layer;
- a plurality of second conductivity-type semiconductor layers on the active layer;
- a shielding layer disposed under the plurality of first conductivity-type semiconductor layers, and
- a metal layer disposed under the shielding layer,
- wherein the metal layer comprises a magnetizable nickel layer,
- wherein the plurality of first conductivity-type semiconductor layers comprise an adsorption prevention layer spaced farthest from the active layer,
- wherein the adsorption prevention layer includes (Alx1Ga1-x1)1-y1Iny1P, and the x1 is 0.6 or less,
- wherein a thickness of the adsorption prevention layer is 2 micrometer (μm) or less,
- wherein the adsorption prevention layer is configured to prevent the light emitting device from sticking to a bottom surface of a substrate, and
- wherein the shielding layer is be configured to shield aluminum (Al) electronegativity of a first conductivity-type semiconductor layer of the plurality of first conductivity-type semiconductor layers.
8 more elements
A display device comprising:
- a substrate;
- a first and second wire electrodes on the substrate;
- a partition layer having a plurality of assembly holes and on the first and second wire electrodes;
- and
- a light emitting device disposed in each of the plurality of assembly holes,
- wherein the light emitting device comprises
- an active layer;
- a plurality of first conductivity-type semiconductor layers under the active layer;
- a plurality of second conductivity-type semiconductor layers on the active layer;
- a shielding layer disposed under the plurality of first conductivity-type semiconductor layers;
- and
- a metal layer disposed under the shielding layer,
- wherein the metal layer comprises a magnetizable nickel layer,
- wherein the plurality of first conductivity-type semiconductor layers comprise an adsorption prevention layer spaced farthest from the active layer,
- wherein the adsorption prevention layer includes (Alx1Ga1-x1)1-y1Iny1P, and the x1 is 0.6 or less,
- wherein a thickness of the adsorption prevention layer is 2 micrometer (μm) or less,
- wherein the adsorption prevention layer is configured to prevent the light emitting device from sticking to a bottom surface of the substrate, and
- wherein the shielding layer is be configured to shield aluminum (Al) electronegativity of a first conductivity-type semiconductor layer of the plurality of first conductivity-type semiconductor layers.
15 more elements
Dependencies are inferred from the claim text.