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US 12,598,844 B2Granted
Light emitting device, pixel structure comprising light emitting device, and manufacturing method therefor
AssigneeSamsung Display Co., Ltd.
InventorsHyun Deok Im, Jong Hyuk Kang, Hyun Min Cho
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Abstract
A light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first insulating film surrounding an outer surface of at least one layer from among the first semiconductor layer, the second semiconductor layer, and the active layer, and a second insulating film surrounding an outer surface of the first insulating film.
Claims18
A light emitting device, comprising:
- a first semiconductor layer;
- an active layer disposed on the first semiconductor layer;
- a second semiconductor layer disposed on the active layer;
- a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
- a second insulating film surrounding an outer surface of the first insulating film;
- and
- a hydrophobic layer disposed on at least a portion of a surface of the second insulating film,
- wherein the hydrophobic layer is formed to cover an entire upper surface of the second insulating film.
5 more elements
A pixel structure, comprising:
- a substrate;
- an electrode component comprising a first electrode disposed on the substrate, and
- a second electrode disposed on a same plane as the first electrode to be spaced apart therefrom;
- a light emitting device aligned between the first electrode and the second electrode;
- and
- a coupling electrode component including a transparent conductive material and comprising:
- a first coupling electrode that is disposed on the first electrode and electrically connects a first distal end of the light emitting device with the first electrode;
- and
- a second coupling electrode that is disposed on the second electrode and electrically connects a second distal end of the light emitting device with the second electrode,
- wherein the light emitting device comprises:
- a first semiconductor layer;
- an active layer disposed on the first semiconductor layer;
- a second semiconductor layer disposed on the active layer;
- a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
- a second insulating film surrounding an outer surface of the first insulating film;
- and
- a first hydrophobic layer disposed on an exposed surface of the second insulating film of the light emitting device, and
- wherein the first coupling electrode and the second coupling electrode do not cover an upper side of the light emitting device,
- wherein the first distal end and the second distal end face each other,
- wherein an upper surface of the first coupling electrode and an upper surface of the second coupling electrode are disposed lower than the upper side of the light emitting device, and
- wherein each of a first end of the light emitting device and a second end of the light emitting device opposite to the first end are spaced apart from both of the first electrode and the second electrode.
18 more elements
A method of manufacturing a pixel structure, comprising:
- forming a first electrode and a second electrode on a substrate to be spaced apart from each other;
- forming a dam structure outside the first electrode and the second electrode, the dam structure being formed of organic material;
- forming an insulating layer on the first electrode and the second electrode, the insulating layer being formed of inorganic material;
- aligning a light emitting device between the first electrode and the second electrode;
- plasma-treating the substrate on which the light emitting device is aligned to generate a plasma-treated substrate;
- removing at least a portion of the insulating layer;
- and
- forming a first coupling electrode and a second coupling electrode that electrically connect the light emitting device to the first electrode and the second electrode, respectively,
- wherein the light emitting device comprises:
- a first semiconductor layer;
- an active layer disposed on the first semiconductor layer:
- a second semiconductor layer disposed on the active layer;
- a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
- a second insulating film surrounding an outer surface of the first insulating film;
- and
- a hydrophobic layer disposed on at least a portion of a surface of the second insulating film, and
- wherein the hydrophobic layer is formed to cover an entire upper surface of the second insulating film.
14 more elements
A pixel structure, comprising:
- a substrate:
- an electrode component comprising a first electrode disposed on the substrate, and
- a second electrode disposed on a same plane as the first electrode to be spaced apart therefrom;
- a light emitting device aligned between the first electrode and the second electrode;
- and
- a coupling electrode component including a transparent conductive material and comprising:
- a first coupling electrode that is disposed on the first electrode and electrically connects a first distal end of the light emitting device with the first electrode;
- and
- a second coupling electrode that is disposed on the second electrode and electrically connects a second distal end of the light emitting device with the second electrode,
- wherein the light emitting device comprises:
- a first semiconductor layer:
- an active layer disposed on the first semiconductor layer:
- a second semiconductor layer disposed on the active layer;
- a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
- a second insulating film surrounding an outer surface of the first insulating film;
- and
- a first hydrophobic layer disposed on an exposed surface of the second insulating film of the light emitting device,
- wherein the first coupling electrode and the second coupling electrode do not cover an upper side of the light emitting device,
- wherein the first distal end and the second distal end face each other,
- wherein an upper surface of the first coupling electrode and an upper surface of the second coupling electrode are disposed lower than the upper side of the light emitting device, and
- wherein the first hydrophobic layer is disposed only on a portion of the second insulating film that faces away from the substrate, and
- wherein the second insulating film surrounds an outer circumferential surface of the first insulating film.
19 more elements
Dependencies are inferred from the claim text.