Solar cell and production method thereof, photovoltaic module

A photovoltaic module, comprising:

• at least one cell string formed by a plurality of solar cells;
• an encapsulation adhesive film used for covering a surface of the at least one cell string;
• and
• a cover plate used for covering a surface of the encapsulation adhesive film facing away from the at least one cell string;
• wherein each of the plurality of solar cells includes:
• a substrate, including a N type or P type doping element;
• a tunnel dielectric layer, located on a surface of the substrate;
• a doped conductive layer, located on a surface of the tunnel dielectric layer away from the substrate, wherein the doped conductive layer includes a doping element of a same type as that of the doping element in the substrate, the doped conductive layer further includes a plurality of sets of heavily doped areas, wherein each respective set of heavily doped areas of the plurality of sets of heavily doped areas occupies an area having a length along a first direction and a width along a second direction, the length being greater than the width, and wherein the each respective set of heavily doped areas includes at least one first heavily doped area extending in the first direction and at least one second heavily doped area extending in the first direction, doping concentration of the at least one first heavily doped area is greater than doping concentration of the at least one second heavily doped area, and wherein the plurality of sets of heavily doped areas are arranged at intervals in the second direction;
• and
• a plurality of electrodes arranged at intervals in the first direction, wherein each of the plurality of electrodes extends in the second direction and corresponds to the plurality of sets of heavily doped areas, and wherein each of the plurality of electrodes contacts with at least part of each set of heavily doped areas of the doped conductive layer;
• wherein a space between any two adjacent first heavily doped areas among the plurality of sets of heavily doped areas is occupied by portions of two adjacent second heavily doped areas and by a portion of the substrate between the portions of two adjacent second heavily doped areas, and the space has a dimension P in the second direction and 0.2O≥P≥0.05O, and wherein O represents a dimension of a first heavily doped area along the second direction;
• and
• wherein 0.00006L≥P≥0.00001L, L represents a dimension of an electrode along the second direction.