Detection device

A detection device comprising:

• a substrate;
• a plurality of photodiodes arranged on the substrate;
• a plurality of transistors provided correspondingly to each of the photodiodes;
• an insulating film that covers the transistors;
• and
• a plurality of lower electrodes each of which is provided above the insulating film correspondingly to each of the photodiodes, and is electrically coupled to the transistors, wherein
• the lower electrodes and the photodiodes are stacked in this order above the insulating film,
• one of the lower electrodes and one of the photodiodes are provided so as to overlap the transistors in a plan view from a direction orthogonal to the substrate,
• the transistors comprise:
• a reset transistor that comprises a first semiconductor layer, and is configured to supply a reset potential to the photodiode;
• and
• a read transistor that comprises a second semiconductor layer, and is configured to output a signal generated by the photodiode to an output signal line,
• the first semiconductor layer of the reset transistor and the second semiconductor layer of the read transistor are disposed in each area surrounded by two of the output signal lines adjacent to each other in a first direction and two of reset control scan lines adjacent to each other in a second direction crossing the first direction,
• the first semiconductor layer of the reset transistor extends in the first direction crossing the output signal lines,
• the second semiconductor layer of the read transistor extends in the second direction crossing the first direction, and
• a width in the second direction intersecting an extending direction of the first semiconductor layer of the reset transistor is smaller than a width in the first direction intersecting an extending direction of the second semiconductor layer of the read transistor.