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US 12,598,831 B2Granted
Pixel shielding using air gaps
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChunHao Lin, Yun-Wei Cheng, Kuo-Cheng Lee, Chien Nan Tu
Life of this patent
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Abstract
A shielding structure of air gaps, formed on a grid structure between pixel sensors in a pixel array, reduces crosstalk. Efficiency and signal-to-noise ratio of the pixel sensors is increased because crosstalk is reduced. The shielding structure also increases quantum efficiency of the pixel array because the air gaps do not adsorb photons.
Claims20
A semiconductor device, comprising:
- a photodiode;
- an isolation structure at least partially surrounding the photodiode;
- and
- a grid structure, over the isolation structure, including a metal layer with at least one air gap, a first dielectric layer, and a second dielectric layer,
- wherein the at least one air gap further extends into the first dielectric layer.
2 more elements
A method, comprising:
- forming a metal layer over an isolation structure that at least partially surrounds a photodiode;
- etching a portion of the metal layer to form at least one recess;
- etching a portion of the isolation structure to expand the at least one recess;
- and
- forming at least one dielectric layer over the metal layer, wherein the at least one dielectric layer encloses an air gap in the metal layer, wherein the air gap further extends into the isolation structure.
2 more elements
A semiconductor device, comprising:
- a photodiode;
- an isolation structure at least partially surrounding the photodiode and including at least one air gap;
- and
- a grid structure, over the isolation structure, including a metal layer and at least one dielectric layer, wherein the at least one air gap further extends into the metal layer.
1 more element
Dependencies are inferred from the claim text.