Solid-state imaging device and manufacturing method therefor

A solid-state imaging device, comprising:

• a semiconductor substrate having a pixel area having a plurality of pixels formed therein;
• and
• a transparent structure joined to a light incident surface side of the semiconductor substrate with a resin and having a hollow structure;
• and
• an anti-reflection film at an inner surface of the hollow structure,
• wherein the transparent structure includes a glass substrate and a transparent film,
• wherein the hollow structure is formed between the glass substrate and the transparent film,
• wherein the anti-reflection film includes a plurality of transparent films layered on each other, and
• wherein the plurality of transparent films have refractive indexes reduced in order of distance from the light incident surface side.

A method for manufacturing a solid-state imaging device, the method comprising:

• forming a hollow structure in a transparent structure, wherein the transparent structure includes a glass substrate, and wherein the method includes forming the hollow structure by forming an opening in the glass substrate by etching, and then forming a transparent film at an upper part of the opening, thereby sealing the opening;
• joining the transparent structure to a light incident surface side of a semiconductor substrate having a plurality of pixel areas with resin;
• and
• forming a plurality of transparent films at side and bottom surfaces of the opening, and the transparent films have refractive indexes reduced in order of distance from the light incident surface side of incident light.