CMOS image sensor with 3D monolithic OSFET and FEMIM
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsShou-Zen Chang, Ming-Han Liao, Min-Cheng Chen, Shang-Shiun Chuang
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Abstract
A CMOS image sensor with 3D monolithic OSFET and FEMIM capacitor, including a substrate with CMOS devices formed thereon, a BEOL interconnect layer on the substrate and with BEOL interconnects formed therein, a pixel circuit layer on the BEOL interconnect layer. The OSFETs and FEMIM capacitors are formed in the pixel circuit layer, and a photoelectric conversion layer on the pixel circuit layer and with photodiodes are formed therein, wherein the CMOS devices, the OSFETs, FEMIM capacitors and photodiodes are electrically connected with each other through the BEOL interconnects.
Claims4
A CMOS image sensor with 3D monolithic OSFET and FEMIM capacitor, comprising:
- only one substrate with CMOS field effect transistors formed thereon;
- a BEOL interconnect layer on said substrate, and BEOL interconnects are formed in said BEOL interconnect layer;
- a pixel circuit layer in said BEOL interconnect layer, wherein OSFETs and FEMIM capacitors are formed in said pixel circuit layer, and said OSFET is provided with a channel layer made of oxide-semiconductor material;
- and
- a photoelectric conversion layer on said pixel circuit layer, wherein photodiodes are provided in said photoelectric conversion layer;
- wherein said CMOS field effect transistors, said OSFETs, said FEMIM capacitors and said photodiodes are electrically connected with each other through said BEOL interconnect layer.
Dependencies are inferred from the claim text.