Image sensor structure
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsJu-Sheng Lu, Yi-Ting Wang, Ming-Chan Liu
Life of this patent
Estimating the term…
Loading patent…
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsJu-Sheng Lu, Yi-Ting Wang, Ming-Chan Liu
Estimating the term…
An image sensor structure including a substrate, a first pixel structure, a second pixel structure, a dielectric layer, and a conductive layer stack is provided. The first pixel structure includes a first light sensing device. The second pixel structure includes a second light sensing device. The conductive layer stack includes conductive layers. The conductive layer stack has a first opening and a second opening. The first opening is located directly above the first light sensing device and passes through the conductive layers. The second opening is located directly above the second light sensing device and passes through the conductive layers. The second minimum width of the second opening is smaller than the first minimum width of the first opening. The luminous flux of the second pixel structure is different from the luminous flux of the first pixel structure.
An image sensor structure, comprising:
An image sensor structure, comprising:
An image sensor structure, comprising:
Dependencies are inferred from the claim text.