Method for manufacturing semiconductor device
AssigneeJapan Display Inc.
InventorsHajime Watakabe, Masashi Tsubuku, Toshinari Sasaki, Takaya Tamaru
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Abstract
A method for manufacturing semiconductor device according to an embodiment includes: forming a first metal oxide layer containing aluminum as a main component above a substrate; forming an oxide semiconductor layer above the first metal oxide layer; forming a gate insulating layer above the oxide semiconductor layer; forming a second metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the second metal oxide layer is formed above the gate insulating layer; removing the second metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.
Claims19
A method for manufacturing a semiconductor device comprising:
- forming a first metal oxide layer containing aluminum as a main component above a substrate;
- forming an oxide semiconductor layer above the first metal oxide layer;
- forming a gate insulating layer above the oxide semiconductor layer;
- forming a second metal oxide layer containing aluminum as a main component above the gate insulating layer so as to be in contact with a top surface of the gate insulating layer;
- performing a heat treatment in a state where the second metal oxide layer is formed above the gate insulating layer;
- removing the second metal oxide layer after the heat treatment;
- and
- forming a gate electrode above the gate insulating layer so as to be in contact with the top surface of the gate insulating layer.
A method for manufacturing semiconductor device comprising:
- forming a gate electrode above a substrate;
- forming a gate insulating layer above the gate electrode;
- forming a first metal oxide layer containing aluminum as a main component above the gate insulating layer;
- forming a oxide semiconductor layer above the first metal oxide layer;
- forming a first insulating layer above the oxide semiconductor layer;
- forming a second metal oxide layer containing aluminum as a main component above the first insulating layer;
- performing a heat treatment in a state where the second metal oxide layer is formed above the first insulating layer;
- and
- removing the second metal oxide layer in all areas overlapping a pattern of the oxide semiconductor layer in a plan view after the heat treatment.
Dependencies are inferred from the claim text.